Comparative results of low temperature annealing of lightly doped n-layers of silicon carbide irradiated by protons and electrons
statement of authorship
Vitalii V. Kozlovski, Oleg Korolkov, Alexander A. Lebedev, Jana Toompuu, Natalja Sleptsuk
location of publication
Zürich
publisher
year of publication
pages
p. 231-236
conference name, date
18th International Conference on Silicon Carbide and Related Materials, ICSCRM 2019, 29 Sept. - 4 Oct. 2019
conference location
Kyoto, Japan
ISSN
0255-5476
ISBN
978-303571579-8
notes
Bibliogr.: 19ref
scientific publication
teaduspublikatsioon
TTÜ department
language
inglise
Kozlovski, V.V., Korolkov, O., Lebedev, A.A., Toompuu, J., Sleptsuk, N. Comparative results of low temperature annealing of lightly doped n-layers of silicon carbide irradiated by protons and electrons // Silicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 2019. Zürich : Trans Tech Publications, 2020. p. 231-236. (Materials science forum ; 1004).