Solution processed high-K oxides for application as gate dielectric layer in thin film transistor
statement of authorship
Abayomi Titilope Oluwabi, Atanas Katerski, Arvo Mare, Malle Krunks, Ilona Oja Acik
location of publication
Tartu
publisher
year of publication
pages
p. 67 : ill
conference name, date
ASTRA „TTÜ Institutional Development Programme for 2016-2022“ : Graduate School of Functional materials and technologies Scientific Conference 2020, February 4-5, 2020
conference location
Park Inn by Radisson Meriton Conference & Spa Hotel, Tallinn
subject term
notes
ASTRA „TTÜ Institutional Development Programme for 2016-2022“
FMTDK teaduskonverents 2020
TTÜ department
language
eesti
Oluwabi, A.T., Katerski, A., Mere, A., Krunks, M., Oja Acik, I. Solution processed high-K oxides for application as gate dielectric layer in thin film transistor // GSFMT Scientific Conference 2020 : Tallinn, February 4-5, 2020 : abstracts. Tartu : [s.n], 2020. p. 67 : ill.