prindi

Solution processed high-K oxides for application as gate dielectric layer in thin film transistor

autor
Oluwabi, Abayomi Titilope
Katerski, Atanas
Mere, Arvo
Krunks, Malle
Oja Acik, Ilona
vastutusandmed
Abayomi Titilope Oluwabi, Atanas Katerski, Arvo Mare, Malle Krunks, Ilona Oja Acik
allikas
GSFMT Scientific Conference 2020 : Tallinn, February 4-5, 2020 : abstracts
ilmumiskoht
Tartu
kirjastus/väljaandja
[s.n]
ilmumisaasta
2020
leheküljed
p. 67 : ill
konverentsi nimetus, aeg
ASTRA „TTÜ Institutional Development Programme for 2016-2022“ : Graduate School of Functional materials and technologies Scientific Conference 2020, February 4-5, 2020
konverentsi toimumispaik
Park Inn by Radisson Meriton Conference & Spa Hotel, Tallinn
leitav
http://fmtdk.ut.ee/wp-content/uploads/2020/01/GSFMT2020.p
märksõna
pürolüüs
õhukesed kiled
fotoelektronspektroskoopia
märkused
ASTRA „TTÜ Institutional Development Programme for 2016-2022“
FMTDK teaduskonverents 2020
TTÜ struktuuriüksus
materjali- ja keskkonnatehnoloogia instituut
keel
eesti
Oluwabi, A.T., Katerski, A., Mere, A., Krunks, M., Oja Acik, I. Solution processed high-K oxides for application as gate dielectric layer in thin film transistor // GSFMT Scientific Conference 2020 : Tallinn, February 4-5, 2020 : abstracts. Tartu : [s.n], 2020. p. 67 : ill. http://fmtdk.ut.ee/wp-content/uploads/2020/01/GSFMT2020.p