A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiC
author
statement of authorship
E.Velmre, A.Udal
location of publication
[S. l.]
publisher
year of publication
pages
p. 725-728
language
inglise
subject term
Velmre, E., Udal, A. A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiC // Proceedings of the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) : Research Triangle Park, North-Carolina, USA, Oct. 10-15, 1999. Vol. 1. [S. l.] : Trans Tech Publications, 2000. p. 725-728.