prindi

A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiC

autor
Velmre, Enn
Udal, Andres
vastutusandmed
E.Velmre, A.Udal
allikas
Proceedings of the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) : Research Triangle Park, North-Carolina, USA, Oct. 10-15, 1999. Vol. 1
ilmumiskoht
[S. l.]
kirjastus/väljaandja
Trans Tech Publications
ilmumisaasta
2000
leheküljed
p. 725-728
märksõna
ränikarbiid
elektronid
anisotroopia
keel
inglise
Velmre, E., Udal, A. A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiC // Proceedings of the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) : Research Triangle Park, North-Carolina, USA, Oct. 10-15, 1999. Vol. 1. [S. l.] : Trans Tech Publications, 2000. p. 725-728.