prindi

Evaluation of GaN HEMTs for high-voltage stage of isolated DC-DC converters

autor
Chub, Andrii
Zdanowski, Mariusz
Blinov, Andrei
Rabkowski, Jacek
vastutusandmed
Andrii Chub, Mariusz Zdanowski, Andrei Blinov, Jacek Rabkowski
allikas
2016 10th International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG) : proceedings : Opera Nova's Congress Center, Bydgoszcz, Poland, 29. June - 01. July, 2016
ilmumiskoht
Piscataway
kirjastus/väljaandja
IEEE
ilmumisaasta
2016
leheküljed
p. 375-379 : ill
konverentsi nimetus, aeg
10th International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG), 29 June-1 July, 2016
konverentsi toimumispaik
Bydgoszcz, Poland
leitav
https://doi.org/10.1109/CPE.2016.7544217
märksõna
voolumuundurid
lülitid
pooljuhtseadised
võtmesõna
DC-DC converters
GaN HEMT
half-bridge converter
wide bandgap
gate driver
ISSN
2166-9546
ISBN
978-1-4673-7293-0
märkused
Bibliogr.: 31 ref
TTÜ struktuuriüksus
elektrotehnika instituut
keel
inglise
Chub, A., Zdanowski, M., Blinov, A., Rabkowski, J. Evaluation of GaN HEMTs for high-voltage stage of isolated DC-DC converters // 2016 10th International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG) : proceedings : Opera Nova's Congress Center, Bydgoszcz, Poland, 29. June - 01. July, 2016. Piscataway : IEEE, 2016. p. 375-379 : ill. https://doi.org/10.1109/CPE.2016.7544217