Point defects interaction with extended defects and impurities and its influence on the Si-SiO2 system properties
autor
Kropman, Daniel
Arbu, Uno
Kärner, T.
Ugaste, Ülo
Mellikov, Enn
Kauk, Marit
Heinmaa, I.
Samoson, Ago
Medvid, A.
vastutusandmed
D.Kropman, U.Arbu, T.Kärner, Ü.Ugaste, E.Mellikov, M.Kauk, I.Heinmaa, A.Samoson, A.Medvid
allikas
Gettering and defect engineering in semiconductor technology. XI
ilmumiskoht
[S.l.]
kirjastus/väljaandja
Elsevier
ilmumisaasta
2005
leheküljed
p. 333-338 : ill
leitav
https://www.researchgate.net/publication/243760197_Point_Defects_Interaction_with_Extended_Defects_and_Impurities_and_Its_Influence_on_the_Si-SiO_2_System_Properties
märksõna
punktdefektid
elektroni paramagnetresonantsspektroskoopia
tuumamagnetresonants
räni
ränioksiid
ISBN
3-908451-13-2
märkused
Bibliogr.: 8 ref. (Solid state phenomena, ISSN 1012-0394 ; 108/109)
keel
inglise