Modelling of the tunneling current in metal alloy contacts to 6H- and 4H-SiC substrates

autor
vastutusandmed
T. Rang
allikas
MICROSIM II : simulation and design of microsystems and microstructures
ilmumiskoht
Southampton
kirjastus/väljaandja
ilmumisaasta
leheküljed
p. 23-31 : ill
märksõna
tunneleerimise teooria
ISBN
9781853125010
märkused
Bibliogr.: 17 ref
keel
inglise
Rang, T. Modelling of the tunneling current in metal alloy contacts to 6H- and 4H-SiC substrates // MICROSIM II : simulation and design of microsystems and microstructures. Southampton : Computational Mechanics Publications, 1997. p. 23-31 : ill.