Study on power losses of the full soft-switching current-fed DC/DC converter with Si and GaN devices
vastutusandmed
Andrii Chub, Jacek Rabkowski, Andrei Blinov, Dmitri Vinnikov
ilmumiskoht
[S.l.]
kirjastus/väljaandja
ilmumisaasta
leheküljed
p. 13-18
konverentsi nimetus, aeg
41st Annual Conference of the IEEE Industrial Electronics Society (IECON 2015), November 9-12, 2015
konverentsi toimumispaik
Yokohama, Japan
võtmesõna
Si MOSFET
wide band gap semiconductor devices
ISBN
978-1-4799-1761-7
TTÜ struktuuriüksus
keel
inglise
Chub, A., Rabkowski, J., Blinov, A., Vinnikov, D. Study on power losses of the full soft-switching current-fed DC/DC converter with Si and GaN devices // IECON 2015 - Yokohama : 41st Annual Conference of the IEEE Industrial Electronics Society : November 9-12, 2015, Pacifico Yokohama, Yokohama, Japan. [S.l.] : IEEE, 2015. p. 13-18.