prindi

Measurement of charge carrier lifetime temperature-dependence in 4H-SiC power diodes

autor
Udal, Andres
Velmre, Enn
vastutusandmed
A.Udal, E.Velmre
allikas
Proceedings of the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) : Research Triangle Park, North-Carolina, USA, Oct. 10-15, 1999. Vol. 1
ilmumiskoht
[S. l.]
kirjastus/väljaandja
Trans Tech Publications
ilmumisaasta
2000
leheküljed
p. 781-784
leitav
https://www.scientific.net/MSF.338-342.781
märksõna
dioodid
eluiga
temperatuur
mõõtmine
keel
inglise
Udal, A., Velmre, E. Measurement of charge carrier lifetime temperature-dependence in 4H-SiC power diodes // Proceedings of the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) : Research Triangle Park, North-Carolina, USA, Oct. 10-15, 1999. Vol. 1. [S. l.] : Trans Tech Publications, 2000. p. 781-784. https://www.scientific.net/MSF.338-342.781