A model of grain boundary scattering in polycrystalline doped semiconductors
autor
Makletsov, A.
vastutusandmed
A.Makletsov, J.Rimshans
ilmumiskoht
Tallinn
ilmumisaasta
leheküljed
p. 529-531: ill
konverentsi nimetus, aeg
BEC : Baltic Electronics Conference, October 9-14, 1994
konverentsi toimumispaik
Tallinn (Estonia
märksõna
ISBN
9985-59-012-0
märkused
Bibl. 3 ref
keel
inglise
Makletsov, A., Rimshans, J. A model of grain boundary scattering in polycrystalline doped semiconductors // BEC : Baltic Electronics Conference : proceedings of the 4th Biennial Conference, October 9-14, 1994, Tallinn (Estonia). 2. Tallinn, 1994. p. 529-531: ill. https://www.ester.ee/record=b2150914*est