High temperature investigation of ZnS:Ga and CdSe:Ga
autor
vastutusandmed
K.Lott, T.Nirk, O.Volobujeva, S.Šinkarenko, L.Türn, U.Kallavus, A.Grebennik, A.Vishnjakov, A.
allikas
ajakirja aastakäik number kuu
376/377
ilmumisaasta
leheküljed
Proceedings of the 23rd International Conference on Defects in Semiconductors : ICDS-23 : held in Awaji Island, Japan, 24-29 July, 2005. p. 764-766 : ill
ISSN
0921-4526
märkused
Bibliogr.: 13 ref
keel
inglise
Lott, K., Nirk, T., Volobujeva, O., Šinkarenko, S., Türn, L., Kallavus, U., Grebennik, A., Vishnjakov, A. High temperature investigation of ZnS:Ga and CdSe:Ga // Physica B (2006) 376/377, Proceedings of the 23rd International Conference on Defects in Semiconductors : ICDS-23 : held in Awaji Island, Japan, 24-29 July, 2005. p. 764-766 : ill. https://www.sciencedirect.com/science/article/pii/S0921452605015796