prindi

Evaluation of low- and high-voltage GaN transistors in soft-switching DC-DC converter

autor
Blinov, Andrei
Kosenko, Roman
Chub, Andrii
vastutusandmed
Andrei Blinov, Roman Kosenlo, Andrii Chub
allikas
2017 IEEE First Ukraine Conference on Electrical and Computer Engineering (UKRCON) : May 29 - June 2, 2017, Kyiv, Ukraine : conference proceedings
ilmumiskoht
[S.l.]
kirjastus/väljaandja
IEEE
ilmumisaasta
2017
leheküljed
p. 544-547 : ill
konverentsi nimetus, aeg
2017 IEEE First Ukraine Conference on Electrical and Computer Engineering (UKRCON), May 29 - June 2, 2017
konverentsi toimumispaik
Kyiv, Ukraine
leitav
https://doi.org/10.1109/UKRCON.2017.8100299
märksõna
galliumiühendid
lülitid
elektrimuundurid
energiatõhusus
võtmesõna
Gallium Nitride (GaN)
HEMTs
soft switching
dc-dc power converters
energy efficiency
ISBN
978-1-5090-3006-4
märkused
Bibliogr.: 27 ref
TTÜ struktuuriüksus
elektroenergeetika ja mehhatroonika instituut
keel
inglise
Blinov, A., Kosenko R., Chub, A. Evaluation of low- and high-voltage GaN transistors in soft-switching DC-DC converter // 2017 IEEE First Ukraine Conference on Electrical and Computer Engineering (UKRCON) : May 29 - June 2, 2017, Kyiv, Ukraine : conference proceedings. [S.l.] : IEEE, 2017. p. 544-547 : ill. https://doi.org/10.1109/UKRCON.2017.8100299