A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiC
author
statement of authorship
Enn Velmre, Andres Udal
location of publication
[S.l.]
year of publication
pages
paper no 395, 2 p
conference name, date
International Conference on Silicon Carbide and Related Materials : ICSCRM'99 : October 10-15, 1999
conference location
Research Triangle Park, North-Carolina, USA
subject term
ISSN
0255-5476
TalTech department
language
inglise
Velmre, E., Udal, A. A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiC // Abstracts of International Conference on Silicon Carbide and Related Materials : ICSCRM'99 : October 10-15, 1999, Research Triangle Park, North-Carolina, USA. [S.l.], 1999. paper no 395, 2 p.