Complex simulation of punchthrough, tunneling and high-speed characteristics of scaled bipolar devices and circuits
author
Ishevsky, D.V.
statement of authorship
A.N.Bubennikov, D.V.Ishevsky
location of publication
Tallinn
publisher
year of publication
pages
p. 26-31: ill
conference name, date
Automation, simulation & measurement : 3rd biennal conference : Tallinn, Estonia, October 7-11, 1991 = Automatiseerimine, modelleerimine ja mõõtmine : 3. rahvusvaheline konverents
conference location
Tallinn
notes
Bibl.: 6 ref
Kokkuvõte: Skaleeritud bipolaarseadiste ja -lülituste läbitorke, tunnel- ja kiiretoimelisuse karakteristikute kompleksne simuleerimine
language
inglise
Bubennikov, A.N., Ishevsky, D.V. Complex simulation of punchthrough, tunneling and high-speed characteristics of scaled bipolar devices and circuits // Automation, simulation & measurement : 3rd biennal conference : Tallinn, Estonia, October 7-11, 1991. Section S, Simulation = Automatiseerimine, modelleerimine ja mõõtmine : 3. rahvusvaheline konverents / Tallinna Tehnikaülikool. Tallinn : Tallinna Tehnikaülikool, 1992. p. 26-31: ill.