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Evaluation of GaN HEMTs for high-voltage stage of isolated DC-DC convertersChub, Andrii; Zdanowski, Mariusz; Blinov, Andrei; Rabkowski, Jacek2016 10th International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG) : proceedings : Opera Nova's Congress Center, Bydgoszcz, Poland, 29. June - 01. July, 20162016 / p. 375-379 : ill https://doi.org/10.1109/CPE.2016.7544217

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Gate and base drivers for silicon carbide power transistors : an overviewPeftitsis, Dimosthenis; Rabkowski, JacekIEEE transactions on power electronics2016 / p. 7194-7213 : ill http://dx.doi.org/10.1109/TPEL.2015.2510425

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A three-level voltage-source gate driver for SiC MOSFETs in synchronous rectification modeGiannakis, Andreas; Philipps, Daniel; Blinov, Andrei; Peftitsis, Dimosthenis2023 IEEE 17th International Conference on Compatibility, Power Electronics and Power Engineering (CPE-POWERENG)2023 / 6 p https://doi.org/10.1109/CPE-POWERENG58103.2023.10227462

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gate driver (võtmesõna)

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võtmesõna 35