Otsing - TalTech teadusportaal

kuva

reasta

51

artikkel ajakirjas

Impact of phonon drag effect on seebeck coefficient in p-6H-SiC : experiment and simulationBikbajevas, V.; Velmre, Enn; Udal, AndresMaterial science forum2003 / p. 407-410 https://www.scientific.net/MSF.433-436.407

artikkel ajakirjas

52

artikkel kogumikus

Impact of phonon-drag effect on seebeck coefficient in SiC : experiment and simulationBikbajevas, V.; Grivickas, V.; Stölzer, M.; Velmre, Enn; Udal, AndresAbstracts of the Lithuanian National Physics Conference : LNPK-34 : Vilnius, 20032003 / p. 219 http://www.diva-portal.org/smash/record.jsf?pid=diva2%3A269444&dswid=8596

artikkel kogumikus

53

artikkel ajakirjas EST / artikkel ajakirjas ENG

Influence of the proton irradiation temperature on the characteristics of high-power high-voltage silicon carbide schottky diodesKozlovski, Vitali V.; Korolkov, Oleg; Davydovskaya, Klavdia S.; Lebedev, Alexander A.; Levinshteǐn, Michael E.; Sleptšuk, Natalja; Strel'Chuk, Anatolii M.; Toompuu, JanaTechnical Physics Letter2020 / p. 287 - 289 https://doi.org/10.1134/S1063785020030244 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

artikkel ajakirjas EST / artikkel ajakirjas ENG

54

artikkel ajakirjas

Interfaces to 6H-SiC substrates - technology and simulationRang, Toomas; Blum, AlfonsProceedings of the Estonian Academy of Sciences. Engineering1997 / 4, p. 250-259: ill

artikkel ajakirjas

55

raamat

Intermediate layer in the metal-silicon carbide contact : investigation of the intermediate layer in the metal-silicon carbide contact obtained by diffusion weldinSleptšuk, Natalja2012 https://www.amazon.com/Intermediate-Layer-Metal-Silicon-Carbide-Contact/dp/3848422239

raamat

56

artikkel ajakirjas

Interpretation of some physical parameters of SiC Schottky interfaces manufactured by diffusion welding technologyRang, Toomas; Korolkov, Oleg; Ljutov, JevgeniProceedings of the Estonian Academy of Sciences. Engineering2004 / 3, p. 179-184

artikkel ajakirjas

57

artikkel kogumikus

Investigation of additional states in the silicon carbide surface after diffusion weldingMizsei, Janos; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasICSCRM2011 : Cleveland Ohio, USA, September 11-16, 2011 : abstracts2011 / p. 356 : ill https://www.researchgate.net/publication/269377410_Investigation_of_Additional_States_in_the_Silicon_Carbide_Surface_after_Diffusion_Welding

artikkel kogumikus

58

artikkel kogumikus

Investigation of charge carrier lifetime temperature-dependence in 4H-SiC diodesVelmre, Enn; Udal, AndresSilicon carbide and related materials 20062007 / p. 375-378 https://www.researchgate.net/publication/250348987_Investigation_of_Charge_Carrier_Lifetime_Temperature-Dependence_in_4H-SiC_Diodes

artikkel kogumikus

59

dissertatsioon

Investigation of electrical characteristics of SiC based complementary JBS structuresKurel, Raido2005 https://www.ester.ee/record=b2053292*est

dissertatsioon

60

artikkel ajakirjas

Investigation of planetary milling for nano-silicon carbide reinforced aluminium metal matrix compositesKollo, Lauri; Leparoux, Marc; Bradbury, Christopher R.; Jäggi, Christian; Carreno-Morelli, Efrain; Rodriguez-Arbaizar, MikelJournal of alloys and compounds2010 / p. 394-400 : ill https://www.sciencedirect.com/science/article/abs/pii/S0925838809018738

artikkel ajakirjas

61

artikkel kogumikus

Investigation of silicon carbide diode structures via numerical simulations including anisotropic effectsVelmre, Enn; Udal, Andres; Masszi, F.; Nordlander, E.Simulation of semiconductor devices and processes. Vol. 61995 / p. 340-343: ill https://link.springer.com/chapter/10.1007/978-3-7091-6619-2_83

artikkel kogumikus

62

artikkel kogumikus

Investigation of subcontact layers in SiC after diffusion weldingKorolkov, Oleg; Kuznetsova, Natalja; Sitnikova, A.; Viljus, Mart; Rang, ToomasSilicon carbide and related materials2007 / p. 100 https://www.scientific.net/MSF.600-603.647

artikkel kogumikus

63

artikkel kogumikus

Investigation of subcontact layers in SiC after diffusion weldingKorolkov, Oleg; Kuznetsova, Natalja; Sitnikova, A.; Viljus, Mart; Rang, ToomasSilicon carbide and related materials 20072009 / p. 647-650

artikkel kogumikus

64

dissertatsioon

Investigation of the intermediate layer in the metal-silicon carbide contact obtained by diffusion welding = Difusioonkeevitusega valmistatud metalli ja ränikarbiidi vahelise üleminekuala vahekihi uurimineSleptšuk, Natalja2011 https://www.ester.ee/record=b2692547*est

dissertatsioon

65

artikkel kogumikus

Large area 4H-SiC power Schottky diodeRang, Toomas; Korolkov, Oleg; Pikkov, MihhailAbstracts of the 3rd International Conference and Exhibition Micro Materials : MicroMat2000 : April 17-19, 2000, Berlin, Germany2000 / p. 303-304

artikkel kogumikus

66

artikkel kogumikus

Large area 4H-SiC power Schottky diodeRang, Toomas; Korolkov, Oleg; Pikkov, MihhailProceedings of the 3rd International Conference and Exhibition Micro Materials : MicroMat2000 : April 17-19, 2000, Berlin, Germany2000 / p. 890-893

artikkel kogumikus

67

artikkel ajakirjas

Large area 6H-SiC Schottky diodeRang, Toomas; Korolkov, Oleg; Pikkov, MihhailProceedings of the Estonian Academy of Sciences. Engineering2000 / 2, p. 155-159 : ill https://artiklid.elnet.ee/record=b1004045*est

artikkel ajakirjas

68

artikkel kogumikus

Large area high quality interfaces to SiC substrates - technology and modellingRang, Toomas; Korolkov, Oleg; Kurel, Raido; Pikkov, MihhailMaterials mechanics, fracture mechanics, micro mechanics1999 / p. 574-579: ill

artikkel kogumikus

69

artikkel ajakirjas

Leakage currents in 4H-SiC JBS diodesIvanov, Pavel; Korolkov, Oleg; Sleptšuk, NataljaSemiconductors2012 / p. 397-400 : ill https://link.springer.com/article/10.1134/S106378261203013X

artikkel ajakirjas

70

artikkel ajakirjas EST / artikkel ajakirjas ENG

Low-temperature annealing of lightly doped n-4H-SiC layers after irradiation with fast electronsKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasSemiconductors2019 / p. 975−978 https://doi.org/10.1134/S1063782619070133 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

artikkel ajakirjas EST / artikkel ajakirjas ENG

71

artikkel kogumikus

Measurements of charge carrier lifetime temperature dependence in 4H-SiC power diodesVelmre, Enn; Udal, AndresAbstracts of International Conference on Silicon Carbide and Related Materials : ICSCRM'99 : October 10-15, 1999, Research Triangle Park, North-Carolina, USA1999 / paper no 394, 2 p https://www.researchgate.net/publication/240833834_Measurement_of_Charge_Carrier_Lifetime_Temperature-Dependence_in_4H-SiC_Power_Diodes

artikkel kogumikus

72

artikkel ajakirjas EST / artikkel ajakirjas ENG

Modeling and simulations of 4H-SiC/6H-SiC/4H-SiC single quantum-well light emitting diode using diffusion bonding techniqueRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasMicromachines2021 / art. 1499 https://doi.org/10.3390/mi12121499 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

artikkel ajakirjas EST / artikkel ajakirjas ENG

73

artikkel ajakirjas

Modelling of charge carrier non-isothermal transport in silicon and silicon carbideVelmre, Enn; Udal, AndresProceedings of the Estonian Academy of Sciences. Engineering2000 / 2, p. 144-154 : ill https://artiklid.elnet.ee/record=b1004044*est

artikkel ajakirjas

74

artikkel kogumikus

Modelling of inhomogeneities of SiC Schottky interfacesRang, ToomasSoftware for Electrical Engineering Analysis and Design V : [Fifth International Conference ... : Electrosoft V]2001 / p. 3-15 : ill https://www.witpress.com/Secure/elibrary/papers/ES01/ES01000FU.pdf

artikkel kogumikus

75

artikkel kogumikus EST / artikkel kogumikus ENG

Nano- and Micro-Scale simulations of Ge/3C-SiC and Ge/4H-SiC NN-heterojunction diodesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 2019 Materials science forum2020 / p. 490-496 https://doi.org/10.4028/www.scientific.net/MSF.1004.490 Conference proceedings at Scopus Article at Scopus

artikkel kogumikus EST / artikkel kogumikus ENG

ränikarbiid (märksõna)

teaviku laadid

märksõna 1