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76

artikkel kogumikus

Parametric simulation of SiC Schottky JBC structuresRang, Toomas; Kurel, RaidoComputer methods and experimental measurements for surface effects and contact mechanics VIII2007 / p. 315-334 https://www.witpress.com/Secure/elibrary/papers/SECM07/SECM07030FU1.pdf

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77

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Polytypic heterojunctions for wide bandgap semiconductor materialsShenkin, Mikhail; Korolkov, Oleg; Rang, Toomas; Rang, GalinaMaterials characterization VII2015 / p. 273-282 : ill

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78

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Preliminary approach to the timing measurements for reverse recovery applied to the SiC Schottky diode modelPikkov, MihhailThe 7th Biennial Conference on Electronics and Microsystem Technology "Baltic Electronics Conference" : BEC 2000 : October 8 - 11, 2000, Tallinn, Estonia : conference proceedings2000 / p. 321-322 : ill

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79

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Preliminary investigation of diffusion welded contacts to p-type 6H-SiCKorolkov, Oleg; Rang, Toomas; Kuznetsova, Natalja; Ruut, JanaBEC 2002 : proceedings of the 8th Biennial Baltic Electronics Conference : October 6-9, 2002, Tallinn, Estonia2002 / p. 55-56 : ill

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80

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Ränikarbiidil põhinevate jõupooljuhtseadiste disain ja karakteriseerimineRang, Toomas; Rang, GalinaTeadusmõte Eestis. 4, Tehnikateadused. 22007 / lk. 121-131 : ill

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81

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Self-Propagating High-Temperature Synthesis of Silicon Carbide Using Reactions Thermokinetic Coupling ApproachAmirkhanyan, Narine; Kirakosyan, Hasmik; Zakaryan, Marieta; Zurnachyan, Alina; Aydinyan, SofiyaEC-SILICONF2 : The 2nd European Conference on Silicon and Silica Based Materials, Hungary, October 4-8, 20212021 / p. 118

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82

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SiC Schottky diode for use in power convertorsPikkov, Mihhail; Rang, Toomas; Pokatilov, AndreiBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 245-246 : ill

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83

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SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, Toomas11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]2016 / p. 42

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84

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SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasSilicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece2017 / p. 697-700 : ill https://doi.org/10.4028/www.scientific.net/MSF.897.697

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85

artikkel ajakirjas

SiC и GaAs диоды в устройствах силовой электроникиBlinov, Andrei; Vinnikov, Dmitri; Rang, ToomasТехнiчна електродинамiка : тематичний випуск : силова електрониiка та енергоефективнiсть2012 / с. 42-46 : ил

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86

artikkel kogumikus

Silicon carbide - new challenge for power semiconductor devicesRang, Toomas; Rang, Galina2nd International Symposium "Topical Problems of Education in the Field of Electrical and Power Engineering" : Kuressaare, Estonia, January 17-22, 20052005 / p. 36-42 : ill

artikkel kogumikus

87

artikkel kogumikus EST / artikkel kogumikus ENG

Simulations of heterostructures based on 3C-4H and 6H-4H silicon carbide polytypesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon carbide and related materials 2017 : ICSCRM 2017 : selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and related materials, September 17-22, 2017, Washington, DC, USA2018 / p. 302-305 : ill https://doi.org/10.4028/www.scientific.net/MSF.924.302 Conference Proceedings at Scopus Article at Scopus

artikkel kogumikus EST / artikkel kogumikus ENG

88

artikkel ajakirjas EST / artikkel ajakirjas ENG

Sintering of silicon carbide obtained by combustion synthesisAmirkhanyan, Narine; Kirakosyan, Hasmik; Zakaryan, Marieta; Zurnachyan, Alina; Rodriguez, Miguel Angel; Abovyan, L.; Aydinyan, SofiyaCeramics international2023 / p. 26129-26134 https://doi.org/10.1016/j.ceramint.2023.04.233 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

artikkel ajakirjas EST / artikkel ajakirjas ENG

89

artikkel kogumikus

Some comparative properties of diffusion-welded contacts to 6H and 4H silicon carbideKorolkov, Oleg; Rang, ToomasSilicon Carbide and Related Materials 2001 : ICSCRM2001 : proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28 - November 2, 2001. Part 22002 / p. 941-944 : ill

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90

artikkel kogumikus

Some of comparative properties of diffusion welded contacts to 6H- and 4H-silicon carbideKorolkov, Oleg; Rang, ToomasInternational Conference on Silicon Carbide and Related Materials 2001 - ICSCRM2001 - October 28-November 2, 2001 (Epochal Tsukuba, Ibaraki, Japan) : technical digest2001 / p. 625-626 : ill https://www.researchgate.net/publication/250340293_Some_Comparative_Properties_of_Diffusion-Welded_Contacts_to_6H_and_4H_Silicon_Carbide

artikkel kogumikus

91

artikkel kogumikus

Static and dynamic behavior of the SiC complementary JBS structuresKurel, Raido; Rang, ToomasBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 59-62 : ill

artikkel kogumikus

92

artikkel ajakirjas EST / artikkel ajakirjas ENG

ZrC-TiC-MoSi2 ceramic composite by spark plasma sinteringHussainova, Irina; Minasyan, Tatevik; Liu, Le; Aydinyan, SofiyaJournal of Physics: Conference Series2020 / art. 012028 https://doi.org/10.1088/1742-6596/1527/1/012028 Conference Proceedings at Scopus Article at Scopus Article at WOS

artikkel ajakirjas EST / artikkel ajakirjas ENG

93

artikkel kogumikus

Temperature effects in alloy metal and 6H-SiC substrate Schottky contacts caused by the current suppressing effectRang, Toomas; Blum, AlfonsProceedings of the International Conference and Exhibition Micro Materials : MicroMat '97, April 16-18, 1997, Berlin, Germany1997 / p. 591-596

artikkel kogumikus

94

artikkel kogumikus

The basic Schottky parameters for combined diffusion welded and sputter metal contactsKuznetsova, Natalja; Korolkov, Oleg; Rang, Toomas; Pikkov, MihhailBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 47-50 : ill

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95

artikkel kogumikus

The measurement and tuning of SiC diode voltage doubler represented as diffusion-welded stack [Online resource]Toompuu, Jana; Sleptšuk, Natalja; Land, Raul; Korolkov, Oleg; Rang, ToomasBEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 20182018 / 4 p.: ill https://doi.org/10.1109/BEC.2018.8600963

artikkel kogumikus

96

artikkel ajakirjas

The specificity of solid-phase interaction of aluminium with silicon carbide in the manufacture of diffusion-welded contacts to semiconductor devicesSleptšuk, Natalja; Korolkov, Oleg; Toompuu, Jana; Rang, Toomas; Mikli, ValdekElektronika ir elektrotechnika = Electronics and electrical engineering2012 / p. 45-48 : ill https://eejournal.ktu.lt/index.php/elt/article/view/2610

artikkel ajakirjas

97

artikkel kogumikus

Thermopower measurements in 4H-SiC and theoretical calculations considering the phonon drag effectGrivickas, V.; Stölzer, M.; Velmre, Enn; Udal, Andres; Grivickas, P.; Syväjärvi, M.; Yakimova, R.; Bikbajevas, V.Silicon Carbide and Related Materials : ECSCRM2000 : proceedings of the 3rd European Conference on Silicon Carbide and Related Materials : Kloster Banz, Germany, September 20002001 / p. 491-494 : ill https://www.researchgate.net/publication/240833914_Thermopower_Measurements_in_4H-SiC_and_Theoretical_Calculations_Considering_the_Phonon_Drag_Effect

artikkel kogumikus

98

artikkel kogumikus

Thermopower measurements in 4H-SiC and Theoretical calculations considering the phonon drag effectGrivickas, V.; Stölzer, M.; Velmre, Enn; Udal, Andres; Grivickas, P.; Syväjärvi, M.; Yakimova, R.; Bikbajevas, V.Abstracts of the 3rd European Conference on Silicon Carbide and Related Materials : ECSCRM'2000 : Sept. 3-7, 2000, Kloster Banz, Germany2000 / p. 144

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99

artikkel kogumikus

Two dimensional modelling of alloy metal Schottky contacts to 6H-SiC substrateRang, Toomas; Blum, AlfonsProceedings of the ELECTROSOFT 96, May 28-30, San-Miniato, Italy1996 / p. 347-356

artikkel kogumikus

100

artikkel kogumikus

Two-dimensional nonisothermal analysis of the current crowding effect at nonuniform SiC Schottky contacts using device simulator DYNAMIT-2DTKurel, Raido; Udal, AndresBEC 2002 : proceedings of the 8th Biennial Baltic Electronics Conference : October 6-9, 2002, Tallinn, Estonia2002 / p. 51-54 : ill

artikkel kogumikus

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