Nano- and Micro-Scale simulations of Ge/3C-SiC and Ge/4H-SiC NN-heterojunction diodes
statement of authorship
Muhammad Haroon Rashid, Ants Koel, Toomas Rang
source
location of publication
Zürich
publisher
year of publication
pages
p. 490-496
conference name, date
18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), September 29 - October 4, 2019
conference location
Kyoto, Japan
subject term
kvartiil
category (general)
category (sub)
ISSN
1662-9752
notes
Bibliogr.: 16 ref
scientific publication
teaduspublikatsioon
classifier
TTÜ department
language
inglise
Rashid, M.H., Koel, A., Rang, T. Nano- and Micro-Scale simulations of Ge/3C-SiC and Ge/4H-SiC NN-heterojunction diodes // Silicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 2019, Materials science forum. Zürich : Trans Tech Publications, 2020. p. 490-496. (Materials science forum ; 1004).