Complex simulation of punchthrough, tunneling and high-speed characteristics of scaled bipolar devices and circuits
author
Ishevsky, D.V.
statement of authorship
A.N.Bubennikov, D.V.Ishevsky
location of publication
Tallinn
year of publication
pages
p. 26-31: ill
subject term
notes
Bibl. 6 ref
review
Kokkuvõte: Skaleeritud bipolaarseadiste ja -lülituste läbitorke, tunnel- ja kiiretoimelisuse karakteristikute kompleksne simuleerimine
language
inglise
Bubennikov, A.N., Ishevsky, D.V. Complex simulation of punchthrough, tunneling and high-speed characteristics of scaled bipolar devices and circuits // Automation, simulation & measurement : ASM'91 : 3rd biennal conference, Tallinn, October 7-11, 1991. Section S / Tallinn Technical University. Tallinn, 1992. p. 26-31: ill.