Point defects interaction with extended defects and impurities and its influence on the Si-SiO2 system properties
author
statement of authorship
D.Kropman, U.Arbu, T.Kärner, Ü.Ugaste, E.Mellikov, M.Kauk, I.Heinmaa, A.Samoson, A.Medvid
source
Gettering and defect engineering in semiconductor technology. XI
location of publication
[S.l.]
publisher
year of publication
pages
p. 333-338 : ill
ISBN
3-908451-13-2
notes
Bibliogr.: 8 ref. (Solid state phenomena, ISSN 1012-0394 ; 108/109)
language
inglise
Kropman, D., Arbu, U., Kärner, T., Ugaste, Ü., Mellikov, E., Kauk, M., Heinmaa, I., Samoson, A., Medvid, A. Point defects interaction with extended defects and impurities and its influence on the Si-SiO2 system properties // Gettering and defect engineering in semiconductor technology. XI. [S.l.] : Elsevier, 2005. p. 333-338 : ill.