Degragation of 600-V 4H-SiC Schottky diodes under irradation with 0,9 MeV electrons
author
Davydovskaja, K. S.
statement of authorship
A.A. Lebedev, K.S. Davydovskaya, V.V. Kozlovski, O.M. Korolkov, N.S. Sleptšuk, J. Toompuu
location of publication
[S.l.]
year of publication
pages
p. 49
conference name, date
11th European Conference on Silicon Carbide and Related Materials ECSCRM 2016, September 25-29, 2016
conference location
Halkidiki, Greece
subject term
keyword
TTÜ department
language
inglise
Lebedev, A., Davydovskaya, K., Kozlovski, V., Korolkov, O., Sleptšuk, N., Toompuu, J. Degragation of 600-V 4H-SiC Schottky diodes under irradation with 0,9 MeV electrons // 11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]. [S.l.], 2016. p. 49.