Degragation of 600-V 4H-SiC Schottky diodes under irradation with 0,9 MeV electrons

vastutusandmed
A.A. Lebedev, K.S. Davydovskaya, V.V. Kozlovski, O.M. Korolkov, N.S. Sleptšuk, J. Toompuu
ilmumiskoht
[S.l.]
ilmumisaasta
leheküljed
p. 49
konverentsi nimetus, aeg
11th European Conference on Silicon Carbide and Related Materials ECSCRM 2016, September 25-29, 2016
konverentsi toimumispaik
Halkidiki, Greece
võtmesõna
keel
inglise
Lebedev, A., Davydovskaya, K., Kozlovski, V., Korolkov, O., Sleptšuk, N., Toompuu, J. Degragation of 600-V 4H-SiC Schottky diodes under irradation with 0,9 MeV electrons // 11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]. [S.l.], 2016. p. 49.