Kropman, D., Mellikov, E., Kärner, T., Ugaste, Ü., Laas, T., Heinmaa, I., Medvid, A.*

full record print

Impurity interaction with point defects in the Si-SiO2 structures and its influence on the interface properties

author

Kropman, Daniel

Mellikov, Enn

Kärner, T.

Ugaste, Ülo

Laas, Tõnu

Heinmaa, I.

Medvid, A.

statement of authorship

D.Kropman, E.Mellikov, T.Kärner, Ü.Ugaste, T.Laas, I.Heinmaa, A.Medvid

source

Materials science and engineering : B

journal volume number month

134

year of publication

2006

pages

p. 222-226 : ill

url

https://www.sciencedirect.com/science/article/pii/S0921510706004375

ISSN

0921-5107

notes

Bibliogr.: 8 ref

language

inglise

Märksõnad ja võtmesõnad

subject term

punktdefektid

räni

räniühendid

ränidioksiid

struktuur

vesinik

tuumamagnetresonantsspektroskoopia

Kropman, D., Mellikov, E., Kärner, T., Ugaste, Ü., Laas, T., Heinmaa, I., Medvid, A.* Impurity interaction with point defects in the Si-SiO2 structures and its influence on the interface properties // Materials science and engineering : B (2006) 134, p. 222-226 : ill. https://www.sciencedirect.com/science/article/pii/S0921510706004375