DLTS measurements on 4H-SiC JBS-diodes with boron implanted local p-n junctions

statement of authorship
Pavel Ivanov, Oleg Korolkov, Tatyana Samsonova, Natalja Sleptsuk, Alexander Potapov, Jana Toompuu, Toomas Rang
journal volume number month
Vol. 679/680, Silicon Carbide and Related Materials 2010
year of publication
pages
p. 409-412
conference name, date
Silicon Carbide and Related Materials 2010
keyword
deep level
DLTS measurements
language
inglise
Ivanov, P., Korolkov, O., Samsonova, T., Sleptsuk, N., Potapov, A., Toompuu, J., Rang, T. DLTS measurements on 4H-SiC JBS-diodes with boron implanted local p-n junctions // Materials science forum (2011) Vol. 679/680, Silicon Carbide and Related Materials 2010, p. 409-412.