DLTS measurements on 4H-SiC JBS-diodes with boron implanted local p-n junctions

vastutusandmed
Pavel Ivanov, Oleg Korolkov, Tatyana Samsonova, Natalja Sleptsuk, Alexander Potapov, Jana Toompuu, Toomas Rang
ajakirja aastakäik number kuu
Vol. 679/680, Silicon Carbide and Related Materials 2010
ilmumisaasta
leheküljed
p. 409-412
konverentsi nimetus, aeg
Silicon Carbide and Related Materials 2010
võtmesõna
deep level
DLTS measurements
keel
inglise
Ivanov, P., Korolkov, O., Samsonova, T., Sleptsuk, N., Potapov, A., Toompuu, J., Rang, T. DLTS measurements on 4H-SiC JBS-diodes with boron implanted local p-n junctions // Materials science forum (2011) Vol. 679/680, Silicon Carbide and Related Materials 2010, p. 409-412.