Stress relaxation mechanism by strain in the Si-SiO2 system and its influence on the interface properties
author
statement of authorship
Daniel Kropman, Viktor Seeman, Sergei Dolgov, Ivo Heinmaa, Artur Medvid
publisher
journal volume number month
vol. 13, 10-12
year of publication
pages
p. 790 - 792
ISSN
1862-6351
notes
Bibliogr.: 5 ref
scientific publication
teaduspublikatsioon
language
inglise
subject term
keyword
category (general)
category (sub)
TTÜ department
Kropman, D., Seeman, V., Dolgov, S., Heinmaa, I., Medvid, A. Stress relaxation mechanism by strain in the Si-SiO2 system and its influence on the interface properties // Physica Status Solidi (C) Current Topics in Solid State Physics (2016) vol. 13, 10-12, p. 790 - 792.