full record print

Degradation of 600-V 4H-SiC Schottky diodes under irradiation with 0.9 MeV electrons

author
statement of authorship
A.A. Lebedev, K.S. Davydovskaya, V.V. Kozlovski, O. Korolkov, N. Sleptsuk, J. Toompuu
source
location of publication
Zurich
publisher
year of publication
pages
p. 447-450 : ill
series
conference name, date
11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016
conference location
Halkidiki, Greece
url
ISSN
0255-5476
ISBN
978-3-0357-1043-4
notes
Bibliogr.: 11 ref
scientific publication
teaduspublikatsioon
TTÜ department
language
inglise
Lebedev, A.A., Davidovskaja, K.S., Kozlovski, V.V., Korolkov, O., Sleptšuk, N., Toompuu, J. Degradation of 600-V 4H-SiC Schottky diodes under irradiation with 0.9 MeV electrons // Silicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece. Zurich : Trans Tech Publications, 2017. p. 447-450 : ill. (Materials science forum ; 897). https://doi.org/10.4028/www.scientific.net/MSF.897.447