Simulations of heterostructures based on 3C-4H and 6H-4H silicon carbide polytypes
statement of authorship
M. Haroon Rashid, Ants Koel and Toomas Rang
location of publication
Zurich
publisher
year of publication
pages
p. 302-305 : ill
conference name, date
International Conference on Silicon Carbide and Related Materials (ICSCRM 2017), September 17-22, 2017
conference location
Washington, DC, USA
subject term
kvartiil
category (general)
category (sub)
keyword
ISSN
0255-5476
ISBN
978-3-0357-1145-5
notes
Bibliogr.: 11 ref
scientific publication
teaduspublikatsioon
classifier
TTÜ department
language
inglise
Rashid, M.H., Koel, A., Rang, T. Simulations of heterostructures based on 3C-4H and 6H-4H silicon carbide polytypes // Silicon carbide and related materials 2017 : ICSCRM 2017 : selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and related materials, September 17-22, 2017, Washington, DC, USA. Zurich : Trans Tech Publications, 2018. p. 302-305 : ill. (Materials science forum ; 924).