Nanoscale and microscale simulations of N-N junction heterostructures of 3C-4H silicon carbide
author
statement of authorship
Haroon Rashid, Ants Koel, Toomas Rang, Reto Gähwiler, Martin Grosberg & Rauno Jõemaa
location of publication
Southampton
publisher
year of publication
pages
p. 235-248 : ill
conference name, date
8th International Conference on Computational Methods and Experiments in Materials Characterisation, 21-23 June, 2017
conference location
Tallinn, Estonia
subject term
keyword
transmission spectrum
projected device density of states (PDDOS)
ISSN
1746-4471
ISBN
978-1-78466-197-7
notes
Bibliogr.: 24 ref
TTÜ department
language
inglise
Rashid, M.H., Koel, A., Rang, T., Gähwiler, R., Grosberg, M., Jõemaa, R. Nanoscale and microscale simulations of N-N junction heterostructures of 3C-4H silicon carbide // Materials and contact characterisation VIII. Southampton : WIT Press, 2017. p. 235-248 : ill. (WIT transactions on engineering sciences ; 116).