Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties

statement of authorship
Daniel Kropman, Tiit Kärner, Sergei Dolgov, Ivo Heinmaa, Tõnu Laas, and Charalampos A. Londos
journal volume number month
Vol. 8, 3
year of publication
pages
p. 694-696 : ill
keyword
hydrogen impurities
EPR
NMR
ISSN
1610-1642
notes
Bibliogr.: 6 ref
language
inglise
Kropman, D., Kärner, T., Dolgov, S., Heinmaa, I., Laas, T., Londos, C.A. Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties // Physica status solidi (c) (2011) Vol. 8, 3, p. 694-696 : ill. https://www.sciencedirect.com/science/article/pii/S0040609009014564