Analysis of peak current for current crowding effect in 4H- and 6H-SiC Schottky structures
autor
vastutusandmed
R.Kurel, T.Rang
ilmumiskoht
[Tallinn]
kirjastus/väljaandja
ilmumisaasta
leheküljed
p. 235-236 : ill
ISBN
9985-59-179-8
märkused
Bibliogr.: 5 ref
keel
inglise
Kurel, R., Rang, T. Analysis of peak current for current crowding effect in 4H- and 6H-SiC Schottky structures // The 7th Biennial Conference on Electronics and Microsystem Technology "Baltic Electronics Conference" : BEC 2000 : October 8 - 11, 2000, Tallinn, Estonia : conference proceedings. [Tallinn] : Tallinn Technical University, 2000. p. 235-236 : ill.