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1
artikkel kogumikus
Analysis of barrier inhomogeneities of P-type Al/4H-SiC schottky barrier diodes
Ziko, Mehadi Hasan
;
Koel, Ants
;
Rang, Toomas
;
Toompuu, Jana
Silicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 2019
2020
/
p. 960-972
https://doi.org/10.4028/www.scientific.net/MSF.1004.960
artikkel kogumikus
2
dissertatsioon
Characterization of Interfaces Between the Metal Film and Silicon Carbide Semiconductor = Metallkontakti ja ränikarbiidi vahelise liidespinna karakteriseerimine
Ziko, Mehadi Hasan
2021
https://digikogu.taltech.ee/et/Item/34be534c-63e8-4013-b271-eaf1a7cb22e7
https://www.ester.ee/record=b5471196*est
dissertatsioon
3
artikkel kogumikus
Comparative characteristics of diffusion-welded high-voltage stacks and connected in series Schottky diodes
Sleptšuk, Natalja
;
Korolkov, Oleg
;
Land, Raul
;
Toompuu, Jana
;
Annus, Paul
;
Rang, Toomas
BEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia
2016
/
p. 39-42 : ill
http://www.ester.ee/record=b2150914*est
artikkel kogumikus
4
artikkel ajakirjas
Computer aided simulation of power Scottky Diodes
Rang, Toomas
;
Koel, Ants
;
Udal, Andres
Modeling, Simulation and Control
1985
/
p. 1-13
artikkel ajakirjas
5
artikkel kogumikus
Degradation of 600-V 4H-SiC Schottky diodes under irradiation with 0.9 MeV electrons
Lebedev, Alexander A.
;
Davidovskaja, Klavdia
;
Kozlovski, Vitali V.
;
Korolkov, Oleg
;
Sleptšuk, Natalja
;
Toompuu, Jana
Silicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece
2017
/
p. 447-450 : ill
https://doi.org/10.4028/www.scientific.net/MSF.897.447
artikkel kogumikus
6
artikkel kogumikus
Degragation of 600-V 4H-SiC Schottky diodes under irradation with 0,9 MeV electrons
Lebedev, Alexander A.
;
Davydovskaja, K. S.
;
Kozlovski, Vitali V.
;
Korolkov, Oleg
;
Sleptšuk, Natalja
;
Toompuu, Jana
11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]
2016
/
p. 49
artikkel kogumikus
7
dissertatsioon
Formation of Diffusion welded Al contacts to semiconductor silicon carbide
Korolkov, Oleg
2004
dissertatsioon
8
artikkel kogumikus
High voltage diffusion‐welded stacks on the basis of SiC Schottky diodes
Korolkov, Oleg
;
Rang, Toomas
;
Sleptšuk, Natalja
;
Annus, Paul
;
Land, Raul
ICSRM 2015 : program guide
2015
/
p. 73
artikkel kogumikus
9
artikkel kogumikus
High-voltage diffusion‐welded stacks on the basis of SiC Schottky diodes
Korolkov, Oleg
;
Sleptšuk, Natalja
;
Annus, Paul
;
Land, Raul
;
Rang, Toomas
Silicon carbide and related materials 2015 (ICSRM 2015) : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy
2016
/
p. 790-794 : ill
http://dx.doi.org/10.4028/www.scientific.net/MSF.858.790
artikkel kogumikus
10
artikkel ajakirjas
Investigation of barrier inhomogeneities and electronic transport on Al-Foil/p-Type-4H-SiCSchottky barrier Diodes using diffusion welding
Ziko, Mehadi Hasan
;
Koel, Ants
;
Rang, Toomas
;
Rashid, Muhammad Haroon
Crystals
2020
/
p. 636-647
https://doi.org/10.3390/cryst10080636
artikkel ajakirjas
11
artikkel kogumikus
Investigation of deep level centers in i- and n-layers of GaAs pin-diodes
Toompuu, Jana
;
Korolkov, Oleg
;
Sleptšuk, Natalja
;
Rang, Toomas
BEC 2014 : 2014 14th Biennial Baltic Electronics Conference : proceedings of the 14th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 6-8, 2014, Tallinn, Estonia
2014
/
p. 25-28 : ill
artikkel kogumikus
12
dissertatsioon
Investigation of electrical characteristics of SiC based complementary JBS structures
Kurel, Raido
2005
https://www.ester.ee/record=b2053292*est
dissertatsioon
13
dissertatsioon
Investigation of the intermediate layer in the metal-silicon carbide contact obtained by diffusion welding = Difusioonkeevitusega valmistatud metalli ja ränikarbiidi vahelise üleminekuala vahekihi uurimine
Sleptšuk, Natalja
2011
https://www.ester.ee/record=b2692547*est
dissertatsioon
14
artikkel kogumikus
Numerical analysis of the influence of deep energy level traps in SiC Schottky structures
Koel, Ants
;
Rang, Toomas
;
Rang, Galina
High performance structure and materials. VI
2012
/
p. 439-448 : ill
artikkel kogumikus
15
artikkel kogumikus
Numerical simulation of P-type Al/4H-SiC schottky barrier diodes [Online resource]
Ziko, Mehadi Hasan
;
Koel, Ants
;
Rang, Toomas
BEC 2018 : 2018 16th Biennial Baltic Electronics Conference (BEC) : proceedings of the 16th Biennial Baltic Electronics Conference, October 8-10, 2018
2018
/
4 p.: ill
https://doi.org/10.1109/BEC.2018.8600976
artikkel kogumikus
16
artikkel ajakirjas
Numerical two-carrier simulation of the M-S (Schottky) structures
Rang, Toomas
Research report : System Theory Laboratory of Electrical Engineering, University of the Saarland
1985
/
s. 62
artikkel ajakirjas
17
artikkel ajakirjas
One-dimensional numerical simulation of complementary power Schottky structures
Rang, Toomas
IEE proceedings. Part I Solid-state and electron devices
1985
/
p. 253-256
artikkel ajakirjas
18
artikkel kogumikus
SiC JBS diode symmetrical voltage doubler represented as the diffusion-welded stack
Korolkov, Oleg
;
Land, Raul
;
Toompuu, Jana
;
Sleptšuk, Natalja
;
Rang, Toomas
Silicon carbide and related materials 2017 : ICSCRM 2017 : selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and related materials, September 17-22, 2017, Washington, DC, USA
2018
/
p. 862–865 : ill
https://doi.org/10.4028/www.scientific.net/MSF.924.862
artikkel kogumikus
19
artikkel kogumikus
SIC schottky diode rectifier bridge represented as the diffusion-welded stack
Korolkov, Oleg
;
Kozlovski, Vitali V.
;
Lebedev, Alexander A.
;
Land, Raul
;
Sleptšuk, Natalja
;
Toompuu, Jana
;
Rang, Toomas
Silicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece
2017
/
p. 697-700 : ill
https://doi.org/10.4028/www.scientific.net/MSF.897.697
artikkel kogumikus
20
artikkel kogumikus
SIC schottky diode rectifier bridge represented as the diffusion-welded stack
Korolkov, Oleg
;
Land, Raul
;
Sleptšuk, Natalja
;
Toompuu, Jana
;
Rang, Toomas
11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]
2016
/
p. 42
artikkel kogumikus
21
artikkel kogumikus
Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probe
Mizsei, Janos
;
Korolkov, Oleg
;
Toompuu, Jana
;
Rang, Toomas
The 9th European Conference on Silicon Carbide and Related Materials : abstract book : St. Petersburg Russia, 2-6 September, 2012
2012
/
2 p. : ill
artikkel kogumikus
22
artikkel kogumikus
Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probe
Mizsei, Janos
;
Korolkov, Oleg
;
Toompuu, Jana
;
Mikli, Valdek
;
Rang, Toomas
Silicon Carbide and Related Materials 2012 : selected peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6, 2012, St. Petersburg, Russian Federation
2013
/
p. 677-680 : ill
artikkel kogumikus
23
artikkel kogumikus
The dependence of reverse recovery time on barrier capacitance and series on-resistance in Schottky diodes
Veher, Oleksandr
;
Sleptšuk, Natalja
;
Toompuu, Jana
;
Korolkov, Oleg
;
Rang, Toomas
Materials and contact characterisation VIII
2017
/
p. 15-22 : ill
http://dx.doi.org/10.2495/MC170021
artikkel kogumikus
24
artikkel kogumikus
Two dimensional modelling of alloy metal Schottky contacts to 6H-SiC substrate
Rang, Toomas
;
Blum, Alfons
Proceedings of the ELECTROSOFT 96, May 28-30, San-Miniato, Italy
1996
/
p. 347-356
artikkel kogumikus
Kirjeid leitud 24, kuvan
1 - 24
pealkiri
37
1.
Analysis of barrier inhomogeneities of P-type Al/4H-SiC schottky barrier diodes
2.
Analysis of peak current for current crowding effect in 4H- and 6H-SiC Schottky structures
3.
Charge carrier transport in SiC Schottky interfaces : shape factor approach
4.
Clamp mode package diffusion welded power SiC Schottky diodes
5.
Comparative characteristics of diffusion-welded high-voltage stacks and connected in series Schottky diodes
6.
Comparison of Schottky parameters for diffusion-welded and sputter contacts to silicon carbide
7.
Comparison of the dynamic behaviour of complementary 6H- and 4H-SiC Schottky structures using numerical simulation
8.
Current suppressing effect in alloy metal and 6H-SiC substrate Schottky contacts
9.
Degradation of 600-V 4H-SiC Schottky diodes under irradiation with 0.9 MeV electrons
10.
Degragation of 600-V 4H-SiC Schottky diodes under irradation with 0,9 MeV electrons
11.
Diffusion welding techniques for power SiC Schottky packaging
12.
High voltage diffusion‐welded stacks on the basis of SiC Schottky diodes
13.
High-voltage diffusion‐welded stacks on the basis of SiC Schottky diodes
14.
Hot spots caused by contact inhomogeneities in 4H- and 6H-SiC Schottky structures
15.
Interpretation of some physical parameters of SiC Schottky interfaces manufactured by diffusion welding technology
16.
Large area 4H-SiC power Schottky diode
17.
Large area 6H-SiC Schottky diode
18.
Modelling of inhomogeneities of SiC Schottky interfaces
19.
Numerical analysis of the influence of deep energy level traps in SiC Schottky structures
20.
Numerical simulation of P-type Al/4H-SiC schottky barrier diodes [Online resource]
21.
Numerical two-carrier simulation of the M-S (Schottky) structures
22.
One-dimensional numerical simulation of complementary power Schottky structures
23.
Parametric simulation of SiC Schottky JBC structures
24.
Preliminary approach to the timing measurements for reverse recovery applied to the SiC Schottky diode model
25.
Self-heating phenomenon and current suppressing effect at 6H-SiC Schottky interfaces
26.
Self-heating phenomenon and current suppressing effect at the SiC Schottky interfaces
27.
SiC Schottky diode for power converters
28.
SiC Schottky diode for use in power convertors
29.
SIC schottky diode rectifier bridge represented as the diffusion-welded stack
30.
Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probe
31.
Temperature influence on current suppressing effect in SiC Schottky diode
32.
The basic parameters of diffusion welded Al Schottky contacts to p- and n-SiC
33.
The basic Schottky parameters for combined diffusion welded and sputter metal contacts
34.
The dependence of reverse recovery time on barrier capacitance and series on-resistance in Schottky diodes
35.
The Schottky parameter test for combined diffusion welded and sputter large area contacts
36.
The self-heating phenomenon in Schottky diode
37.
Two dimensional modelling of alloy metal Schottky contacts to 6H-SiC substrate
võtmesõna
4
1.
Mott–Schottky plot
2.
schottky barrier diode
3.
Schottky diodes
4.
SiC Schottky diodes
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