Raman scattering characterization of ion-beam synthesized Mg2Si. 1, Influence of the technological conditions on the formation of the Mg2Si in(100) Si matrix
autor
Atanassov, Alexander
Zlateva, Genoveva
Baleva, Mitra
Goranova, Ekaterina
vastutusandmed
Alexander Atanassov, Genoveva Zlateva, Mitra Baleva, Ekaterina Goranova, Blagoj Amov, Christo Angelov, Valdek Mikli
allikas
Plasma processes and polymers
ajakirja aastakäik number kuu
3
ilmumisaasta
leheküljed
2, p. 219-223 : ill
märksõna
ISSN
1612-8850
märkused
Bibliogr.: 6 ref
keel
inglise
Atanassov, A., Zlateva, G., Baleva, M., Goranova, E., Amov, B., Angelov, C., Mikli, V. Raman scattering characterization of ion-beam synthesized Mg2Si. 1, Influence of the technological conditions on the formation of the Mg2Si in(100) Si matrix // Plasma processes and polymers (2006) 3, 2, p. 219-223 : ill.