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A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiCVelmre, Enn; Udal, AndresProceedings of the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) : Research Triangle Park, North-Carolina, USA, Oct. 10-15, 1999. Vol. 12000 / p. 725-728

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Can electrical phenomena be explained with the concept of an "electric family tree"?Järvik, Jaan18th International Symposium "Topical Problems in the Field of Electrical and Power Engineering". Doctoral School of Energy and Geotechnology III : Toila, Estonia, January 14-19, 2019 : [proceedings]2019 / p. 45-46 : ill https://www.ester.ee/record=b5183874*est

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Change in the parameters of electron-irradiated 4H-SIC Schottky diodes as a function of the time during low-temperature isothermal annealingKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Toompuu, Jana; Sleptsuk, Natalja; Rang, ToomasSilicon Carbide and Related Materials 2018 : 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK2019 / p. 734-737 https://doi.org/10.4028/www.scientific.net/MSF.963.734 Conference proceeding at Scopus Article at Scopus

artikkel kogumikus EST / artikkel kogumikus ENG

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artikkel kogumikus EST / artikkel kogumikus ENG

Comparative results of low temperature annealing of lightly doped n-layers of silicon carbide irradiated by protons and electronsKozlovski, Vitali V.; Korolkov, Oleg; Lebedev, Alexander A.; Toompuu, Jana; Sleptsuk, NataljaSilicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 20192020 / p. 231-236 https://doi.org/10.4028/www.scientific.net/MSF.1004.231 Conference Proceedings at Scopus Article at Scopus

artikkel kogumikus EST / artikkel kogumikus ENG

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Corrected accounting of electron-hole scattering in cross-term current equations for Si and SiCVelmre, Enn; Udal, AndresPhysica scripta1999 / Proceedings of 18th Nordic Semiconductor Meeting, Linköping, Sweden, June 7-10, 1998, ISBN 91-87308-71-1, p. 193-197: ill https://ui.adsabs.harvard.edu/abs/1999PhST...79..193V/abstract

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artikkel ajakirjas EST / artikkel ajakirjas ENG

Electron-beam welding of high-entropy alloy and stainless steel: microstructure and mechanical propertiesSokkalingam, Rathinavelu; Mastanaiah, P.; Muthupandi, Veerappan; Sivaprasad, Katakam; Prashanth, Konda GokuldossMaterials and manufacturing processes2020 / p. 1885-1894 https://doi.org/10.1080/10426914.2020.1802045 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

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Fluorene- and fluorenone-based molecules as electron-transporting SAMs for photovoltaic devicesSvirskaite, Lauryna Monika; Kasparavicius, Ernestas; Steponaitis, Matas; Grzibovskis, Raitis; Franckevicius, Marius; Katerski, Atanas; Naujokaitis, Arnas; Karazhanov, Smagul; Gopi, Sajeesh Vadakkedath; Aizstrauts, ArtursRSC advances2024 / p. 14973-14981 https://doi.org/10.1039/D4RA00964A

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Growth of ultra-thin amorphous Al2O3 films on CoAl(1 0 0)Rose, V.; Podgurski, Vitali; Costina, Ioan; Franchy, R.Surface science2003 / p. 128-136 https://www.sciencedirect.com/science/article/pii/S0039602803008914

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artikkel ajakirjas EST / artikkel ajakirjas ENG

Low-temperature annealing of lightly doped n-4H-SiC layers after irradiation with fast electronsKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasSemiconductors2019 / p. 975−978 https://doi.org/10.1134/S1063782619070133 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

artikkel ajakirjas EST / artikkel ajakirjas ENG

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artikkel ajalehes

Rein Munter: Vesi mäletabMunter, ReinTähenduse Teejuhid2021 / Lk. 9 https://teejuhid.postimees.ee/7319813/rein-munter-vesi-maletab

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UFG microstructure processing by ECAP from double electron-beam melted rare metalKommel, LembitNanomaterials by severe plastic deformation IV. Part 12008 / p. 349-354 : ill https://www.scientific.net/MSF.584-586.349

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Влияние донорной примеси на характеристики электрон-фононного взаимодействия к-центров в сульфиде кадмияKrustok, Jüri; Lõo, A.; Piibe, ToomasTallinna Tehnikaülikooli Toimetised1990 / lk. 23-29: ill

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Влияние облучения низкоэнергетическими электронами в растровом электронном микроскопе на параметры полупроводниковых приборовMeiler, Boriss; Kropman, Daniel; Levtšenkova, AllaМикроэлектроника1987 / с. 165-169 : илл https://www.ester.ee/record=b2147720*est

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О возможности определения времени жизни фотоэлектронов и квантового выхода в поликристаллическом сульфиде кадмияKukk, Peeter-Enn; Varvas, JüriСборник статей по химии и химической технологии. 111964 / с. 237-243 : илл https://www.ester.ee/record=b2181984*est https://digikogu.taltech.ee/et/Item/958b7e78-6cf4-425c-b75d-b028262eada8

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Приближенный метод определения времени жизни неравновесных электронов в сульфиде кадмияVarvas, Jüri; Kukk, Peeter-EnnСборник статей по химии и химической технологии. 101964 / с. 257-266 : илл https://www.ester.ee/record=b2181961*est https://digikogu.taltech.ee/et/Item/9569e6db-150a-42c8-bf3b-765725dfd969

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Расчет показателя степени в формуле МиллераVelmre, EnnТруды по электротехнике и автоматике : сборник статей. 111973 / с. 145-154 : илл https://www.ester.ee/record=b2190624*est https://digikogu.taltech.ee/et/Item/d6e57925-e104-44e1-a218-c5b3110d9996

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