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12601

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DefSim - the defective ICPleskacz, Witold A.; Jutman, Artur; Ubar, Raimund-Johannes; Devadze, SergeiDATE 2007 : Design Automation and Test in Europe : Nice, France, April 16-20, 20072007 / p. s96 (2 p.)

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12602

artikkel ajakirjas

DefSim: a remote laboratory for studying physical defects in CMOS digital circuitsPleskacz, Witold A.; Stopjakova, Viera; Borejko, Tomasz; Jutman, Artur; Walkanis, AndrzejIEEE transactions on industrial electronics2008 / 6, p. 2405-2415 : ill

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12603

artikkel kogumikus

DefSim: CMOS defects on chip for research and educationPleskacz, Witold A.; Borejko, Tomasz; Walkanis, A.; Stopjakova, Viera; Jutman, Artur; Ubar, Raimund-Johannes7th IEEE Latin American Test Workshop LATW'06 : Buenos Aires, Argentina, March 26th-29th, 2006 : proceedings2006 / p. 74-79 : ill

artikkel kogumikus

12604

artikkel kogumikus

DefSim: measurement environment for CMOS defectsBorejko, Tomasz; Jutman, Artur; Pleskacz, Witold A.; Ubar, Raimund-Johannes2006 25th International Conference on Microelectronics : Belgrade, Serbia and Montenegro, 14-17 May 2006 : proceedings. Volume 22006 / p. 679-682 https://ieeexplore.ieee.org/document/1651048

artikkel kogumikus

12605

artikkel kogumikus

DefSim-based exercises for studying defects in CMOS gatesJutman, Artur; Pleskacz, Witold A.; Boiko, Nikolai; Ubar, Raimund-JohannesEWME 2006 proceedings : 6th International Workshop on Microelectronics Education : 8-9 June, 2006, Stockholm, Sweden2006 / p. 23-26 : ill

artikkel kogumikus

12606

artikkel ajakirjas

DegaseerimineJalak, J.Sõdur1936 / 12/13, lk. 288-294; 14/15, lk. 358-363 : joon

artikkel ajakirjas

12607

artikkel ajakirjas

Degenerate memory kernels identification problem with flux-type additional conditionsPais, EnnoJournal of inverse and ill-posed problems2006 / 4, p. 397-418 https://www.degruyter.com/document/doi/10.1515/156939406777571003/html

artikkel ajakirjas

12608

artikkel ajakirjas

Deglaciation chronology of the Pandivere and Palivere ice-marginal zones in EstoniaSaarse, Leili; Heinsalu, Atko; Veski, SiimGeological quarterly2012 / p. 353-361 : ill https://gq.pgi.gov.pl/article/view/7719

artikkel ajakirjas

12609

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Degradation of 600-V 4H-SiC Schottky diodes under irradiation with 0.9 MeV electronsLebedev, Alexander A.; Davidovskaja, Klavdia; Kozlovski, Vitali V.; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, JanaSilicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece2017 / p. 447-450 : ill https://doi.org/10.4028/www.scientific.net/MSF.897.447

artikkel kogumikus

12610

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Degradation of a poly(3-hydroxybutyrate-co-3-hydroxyvalerate) (PHBV) compound in different environmentsLyshtva, Pavlo; Voronova, Viktoria; Barbir, Jelena; Filho, Walter Leal; Kröger, Silja Denise; Witt, Gesine; Miksch, Lukas; Sabowski, Reinhard; Gutow, Lars; Frank, CarinaHeliyon2024 / art. e24770 https://doi.org/10.1016/j.heliyon.2024.e24770

artikkel ajakirjas

12611