prindi

Numerical calculations of transient characteristics of a vertical field effect phototransistor taking into account resistance on the gate

autor
Abashkina, S.
Rimshans, J.
Korolkov, V.I.
Tabarov, T.
vastutusandmed
Abashkina S., Rimshans J. and Korolkov V., Tabarov T
allikas
Automation, simulation & measurement : ASM'91 : 3rd biennal conference, Tallinn, October 7-11, 1991. Section S / Tallinn Technical University
ilmumiskoht
Tallinn
ilmumisaasta
1992
leheküljed
p. 83-88: ill
märksõna
transistorid
siirdeprotsessid
mahtuvus (elektrotehnika)
elektritakistus
arvutusmeetodid
märkused
Bibl. 3 ref
retsensioon
Kokkuvõte: Vertikaalse foto-väljatransistori siirdekarakteristikute numbriline modelleerimine koos tüürahela takistuse arvestamisega
keel
inglise
Abashkina, S., Rimshans, J., Korolkov, V., Tabarov, T. Numerical calculations of transient characteristics of a vertical field effect phototransistor taking into account resistance on the gate // Automation, simulation & measurement : ASM'91 : 3rd biennal conference, Tallinn, October 7-11, 1991. Section S / Tallinn Technical University. Tallinn, 1992. p. 83-88: ill.