Numerical investigation of SiC devices performance considering the incomplecte dopant ionization
autor
vastutusandmed
A.Udal, E.Velmre
ilmumiskoht
[S.l.]
kirjastus/väljaandja
ilmumisaasta
leheküljed
p. 1383-1386
ISBN
0-87849-425-1
märkused
(Materials Science Forum ; 527/529)
keel
inglise
Udal, A., Velmre, E. Numerical investigation of SiC devices performance considering the incomplecte dopant ionization // Silicon carbide and related materials 2005. [S.l.] : Trans Tech Publications, 2006. p. 1383-1386.