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1

artikkel kogumikus

A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiCVelmre, Enn; Udal, AndresProceedings of the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) : Research Triangle Park, North-Carolina, USA, Oct. 10-15, 1999. Vol. 12000 / p. 725-728

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artikkel ajakirjas

An analysis of critical parameters of SiC JBS structuresKurel, Raido; Rang, Toomas; Poirier, LaurentProceedings of the Estonian Academy of Sciences. Engineering2006 / 3-2, p. 284-299 : ill

artikkel ajakirjas

3

artikkel kogumikus

Analysis of barrier inhomogeneities of P-type Al/4H-SiC schottky barrier diodesZiko, Mehadi Hasan; Koel, Ants; Rang, Toomas; Toompuu, JanaSilicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 20192020 / p. 960-972 https://doi.org/10.4028/www.scientific.net/MSF.1004.960

artikkel kogumikus

4

dissertatsioon

Characterization of Interfaces Between the Metal Film and Silicon Carbide Semiconductor = Metallkontakti ja ränikarbiidi vahelise liidespinna karakteriseerimineZiko, Mehadi Hasan2021 https://digikogu.taltech.ee/et/Item/34be534c-63e8-4013-b271-eaf1a7cb22e7 https://www.ester.ee/record=b5471196*est

dissertatsioon

5

dissertatsioon

Characterization of silicon carbide (SiC) and graphene-based novel semiconductor devices = Ränikarbiidil (SiC) ja grafeenil pōhinevate uudsete pooljuhtstruktuuride karakteriseerimineRashid, Muhammad Haroon2021 https://www.ester.ee/record=b5397240*est https://digikogu.taltech.ee/et/Item/a64fd50e-125c-49ad-b0a6-6ad2e01b8bfa

dissertatsioon

6

artikkel kogumikus

Combustion synthesis of nanoscale boron and silicon carbidesZakaryan, Marieta; Amirkhanyan, Narine; Kirakosyan, Hasmik; Zurnachyan, Alina; Aydinyan, SofiyaCIMTEC 2022 : 15th International Ceramics Congress (June 20-24) CIMTEC 2022 : 9th Forum on New Materials (June 25-29)2022 http://2022.cimtec-congress.org/focused-session-ca-11_1

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Comparative characteristics of diffusion-welded high-voltage stacks and connected in series Schottky diodesSleptšuk, Natalja; Korolkov, Oleg; Land, Raul; Toompuu, Jana; Annus, Paul; Rang, ToomasBEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia2016 / p. 39-42 : ill http://www.ester.ee/record=b2150914*est

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artikkel kogumikus

Degradation of 600-V 4H-SiC Schottky diodes under irradiation with 0.9 MeV electronsLebedev, Alexander A.; Davidovskaja, Klavdia; Kozlovski, Vitali V.; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, JanaSilicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece2017 / p. 447-450 : ill https://doi.org/10.4028/www.scientific.net/MSF.897.447

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artikkel kogumikus

Degragation of 600-V 4H-SiC Schottky diodes under irradation with 0,9 MeV electronsLebedev, Alexander A.; Davydovskaja, K. S.; Kozlovski, Vitali V.; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, Jana11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]2016 / p. 49

artikkel kogumikus

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Diffusion welding contacts to 6H-SiC substratesKorolkov, Oleg; Rang, Toomas43. Internationales Wissenschaftliches Kolloquium, 21.-24.09.19981998 / p. 47-48

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artikkel kogumikus

Diffusion welding techniques for power SiC Schottky packagingKorolkov, Oleg; Rang, Toomas; Syrkin, A.; Dmitriev, V.Silicon carbide and related materials 20052006 / p. 919-922

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artikkel ajakirjas

Effect of milling time on dual-nanoparticulate-reinforced aluminum alloy matrix composite materialsKwon, Hansang; Saarna, Mart; Yoon, Songhak; Weidenkaff, Anke; Leparoux, MarcMaterials science and engineering : A2014 / p. 338-345 https://doi.org/10.1016/j.msea.2013.10.046

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artikkel kogumikus

Feasibility study of Si and SiC MOSFETs in high-gain DC/DC converter for renewable energy applicationsBlinov, Andrei; Chub, Andrii; Vinnikov, Dmitri; Rang, ToomasProceedings : IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society : Austria Center Vienna, Vienna, Austria, 10-14 November, 20132013 / p. 5975-5978 : ill

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14

dissertatsioon

Formation of Diffusion welded Al contacts to semiconductor silicon carbideKorolkov, Oleg2004

dissertatsioon

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artikkel kogumikus

Grid-frequency Vienna rectifier and isolated current-source DC-DC converters for efficient off-board charging of electric vehiclesRabkowski, Jacek; Blinov, Andrei; Zinchenko, Denys; Wrona, Grzegorz; Zdanowski, Mariusz2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), Lyon, France, 7-11 Sept. 20202020 / 10 p. : ill https://doi.org/10.23919/EPE20ECCEEurope43536.2020.9215772

artikkel kogumikus

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artikkel kogumikus

High voltage diffusion‐welded stacks on the basis of SiC Schottky diodesKorolkov, Oleg; Rang, Toomas; Sleptšuk, Natalja; Annus, Paul; Land, RaulICSRM 2015 : program guide2015 / p. 73

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artikkel ajakirjas

High-efficiency 312-kVA three-phase inverter using parallel connection of silicon carbide MOSFET power modulesColmenares, Juan; Peftitsis, Dimosthenis; Rabkowski, JacekIEEE transactions on industry applications2015 / p. 4664-4676 : ill http://dx.doi.org/10.1109/TIA.2015.2456422

artikkel ajakirjas

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artikkel kogumikus

High-voltage diffusion‐welded stacks on the basis of SiC Schottky diodesKorolkov, Oleg; Sleptšuk, Natalja; Annus, Paul; Land, Raul; Rang, ToomasSilicon carbide and related materials 2015 (ICSRM 2015) : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy2016 / p. 790-794 : ill http://dx.doi.org/10.4028/www.scientific.net/MSF.858.790

artikkel kogumikus

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artikkel ajakirjas

Interfaces to 6H-SiC substrates - technology and simulationRang, Toomas; Blum, AlfonsProceedings of the Estonian Academy of Sciences. Engineering1997 / 4, p. 250-259: ill

artikkel ajakirjas

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artikkel ajakirjas

Interpretation of some physical parameters of SiC Schottky interfaces manufactured by diffusion welding technologyRang, Toomas; Korolkov, Oleg; Ljutov, JevgeniProceedings of the Estonian Academy of Sciences. Engineering2004 / 3, p. 179-184

artikkel ajakirjas

21

dissertatsioon

Investigation of electrical characteristics of SiC based complementary JBS structuresKurel, Raido2005 https://www.ester.ee/record=b2053292*est

dissertatsioon

22

dissertatsioon

Investigation of the intermediate layer in the metal-silicon carbide contact obtained by diffusion welding = Difusioonkeevitusega valmistatud metalli ja ränikarbiidi vahelise üleminekuala vahekihi uurimineSleptšuk, Natalja2011 https://www.ester.ee/record=b2692547*est

dissertatsioon

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artikkel ajakirjas

Low-temperature annealing of lightly doped n-4H-SiC layers after irradiation with fast electronsKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasSemiconductors2019 / p. 975−978 https://doi.org/10.1134/S1063782619070133

artikkel ajakirjas

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artikkel ajakirjas

Modeling and simulations of 4H-SiC/6H-SiC/4H-SiC single quantum-Well light emitting diode using diffusion bonding techniqueRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasMicromachines2021 / art. 1499 https://doi.org/10.3390/mi12121499

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artikkel ajakirjas

Modelling of charge carrier non-isothermal transport in silicon and silicon carbideVelmre, Enn; Udal, AndresProceedings of the Estonian Academy of Sciences. Engineering2000 / 2, p. 144-154 : ill

artikkel ajakirjas

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