Otsing - TalTech Publikatsioonid

ränikarbiid (märksõna)

—

Lisa tingimus Liitotsing

Tühista

teaviku laadid

raamat

artikkel ajakirjas

artikkel ajalehes

artikkel kogumikus

dissertatsioon

Open Access

Teaduspublikatsioon

aasta

ekspordi kõik päringu tulemused (43)
Salvesta TXT fail

Salvesta PDF fail

prindi
Märgitud kirjetega toimetamiseks ava valitud kirjed

kuva

reasta
1

artikkel kogumikus

A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiCVelmre, Enn; Udal, AndresProceedings of the International Conference on Silicon Carbide and Related Materials - 1999 (ICSCRM'99) : Research Triangle Park, North-Carolina, USA, Oct. 10-15, 1999. Vol. 12000 / p. 725-728

artikkel kogumikus
2

artikkel ajakirjas

An analysis of critical parameters of SiC JBS structuresKurel, Raido; Rang, Toomas; Poirier, LaurentProceedings of the Estonian Academy of Sciences. Engineering2006 / 3-2, p. 284-299 : ill

artikkel ajakirjas
3

artikkel kogumikus

Analysis of barrier inhomogeneities of P-type Al/4H-SiC schottky barrier diodesZiko, Mehadi Hasan; Koel, Ants; Rang, Toomas; Toompuu, JanaSilicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 20192020 / p. 960-972 https://doi.org/10.4028/www.scientific.net/MSF.1004.960

artikkel kogumikus
4

dissertatsioon

Characterization of Interfaces Between the Metal Film and Silicon Carbide Semiconductor = Metallkontakti ja ränikarbiidi vahelise liidespinna karakteriseerimineZiko, Mehadi Hasan2021 https://digikogu.taltech.ee/et/Item/34be534c-63e8-4013-b271-eaf1a7cb22e7 https://www.ester.ee/record=b5471196*est

dissertatsioon
5

dissertatsioon

Characterization of silicon carbide (SiC) and graphene-based novel semiconductor devices = Ränikarbiidil (SiC) ja grafeenil pōhinevate uudsete pooljuhtstruktuuride karakteriseerimineRashid, Muhammad Haroon2021 https://www.ester.ee/record=b5397240*est https://digikogu.taltech.ee/et/Item/a64fd50e-125c-49ad-b0a6-6ad2e01b8bfa

dissertatsioon
6

artikkel kogumikus

Combustion synthesis of nanoscale boron and silicon carbidesZakaryan, Marieta; Amirkhanyan, Narine; Kirakosyan, Hasmik; Zurnachyan, Alina; Aydinyan, SofiyaCIMTEC 2022 : 15th International Ceramics Congress (June 20-24) CIMTEC 2022 : 9th Forum on New Materials (June 25-29)2022 http://2022.cimtec-congress.org/focused-session-ca-11_1

artikkel kogumikus
7

artikkel kogumikus

Comparative characteristics of diffusion-welded high-voltage stacks and connected in series Schottky diodesSleptšuk, Natalja; Korolkov, Oleg; Land, Raul; Toompuu, Jana; Annus, Paul; Rang, ToomasBEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia2016 / p. 39-42 : ill http://www.ester.ee/record=b2150914*est

artikkel kogumikus
8

artikkel kogumikus

Degradation of 600-V 4H-SiC Schottky diodes under irradiation with 0.9 MeV electronsLebedev, Alexander A.; Davidovskaja, Klavdia; Kozlovski, Vitali V.; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, JanaSilicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece2017 / p. 447-450 : ill https://doi.org/10.4028/www.scientific.net/MSF.897.447

artikkel kogumikus
9

artikkel kogumikus

Degragation of 600-V 4H-SiC Schottky diodes under irradation with 0,9 MeV electronsLebedev, Alexander A.; Davydovskaja, K. S.; Kozlovski, Vitali V.; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, Jana11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]2016 / p. 49

artikkel kogumikus
10

artikkel kogumikus

Diffusion welding contacts to 6H-SiC substratesKorolkov, Oleg; Rang, Toomas43. Internationales Wissenschaftliches Kolloquium, 21.-24.09.19981998 / p. 47-48

artikkel kogumikus
11

artikkel ajakirjas

Effect of milling time on dual-nanoparticulate-reinforced aluminum alloy matrix composite materialsKwon, Hansang; Saarna, Mart; Yoon, Songhak; Weidenkaff, Anke; Leparoux, MarcMaterials science and engineering : A2014 / p. 338-345 https://doi.org/10.1016/j.msea.2013.10.046

artikkel ajakirjas
12

artikkel kogumikus

Feasibility study of Si and SiC MOSFETs in high-gain DC/DC converter for renewable energy applicationsBlinov, Andrei; Chub, Andrii; Vinnikov, Dmitri; Rang, ToomasProceedings : IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society : Austria Center Vienna, Vienna, Austria, 10-14 November, 20132013 / p. 5975-5978 : ill

artikkel kogumikus
13

dissertatsioon

Formation of Diffusion welded Al contacts to semiconductor silicon carbideKorolkov, Oleg2004

dissertatsioon
14

artikkel kogumikus

Grid-frequency Vienna rectifier and isolated current-source DC-DC converters for efficient off-board charging of electric vehiclesRabkowski, Jacek; Blinov, Andrei; Zinchenko, Denys; Wrona, Grzegorz; Zdanowski, Mariusz2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), Lyon, France, 7-11 Sept. 20202020 / 10 p. : ill https://doi.org/10.23919/EPE20ECCEEurope43536.2020.9215772

artikkel kogumikus
15

artikkel kogumikus

High voltage diffusion‐welded stacks on the basis of SiC Schottky diodesKorolkov, Oleg; Rang, Toomas; Sleptšuk, Natalja; Annus, Paul; Land, RaulICSRM 2015 : program guide2015 / p. 73

artikkel kogumikus
16

artikkel ajakirjas

High-efficiency 312-kVA three-phase inverter using parallel connection of silicon carbide MOSFET power modulesColmenares, Juan; Peftitsis, Dimosthenis; Rabkowski, JacekIEEE transactions on industry applications2015 / p. 4664-4676 : ill http://dx.doi.org/10.1109/TIA.2015.2456422

artikkel ajakirjas
17

artikkel kogumikus

High-voltage diffusion‐welded stacks on the basis of SiC Schottky diodesKorolkov, Oleg; Sleptšuk, Natalja; Annus, Paul; Land, Raul; Rang, ToomasSilicon carbide and related materials 2015 (ICSRM 2015) : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy2016 / p. 790-794 : ill http://dx.doi.org/10.4028/www.scientific.net/MSF.858.790

artikkel kogumikus
18

artikkel ajakirjas

Interfaces to 6H-SiC substrates - technology and simulationRang, Toomas; Blum, AlfonsProceedings of the Estonian Academy of Sciences. Engineering1997 / 4, p. 250-259: ill

artikkel ajakirjas
19

dissertatsioon

Investigation of electrical characteristics of SiC based complementary JBS structuresKurel, Raido2005 https://www.ester.ee/record=b2053292*est

dissertatsioon
20

dissertatsioon

Investigation of the intermediate layer in the metal-silicon carbide contact obtained by diffusion welding = Difusioonkeevitusega valmistatud metalli ja ränikarbiidi vahelise üleminekuala vahekihi uurimineSleptšuk, Natalja2011 https://www.ester.ee/record=b2692547*est

dissertatsioon
21

artikkel ajakirjas

Low-temperature annealing of lightly doped n-4H-SiC layers after irradiation with fast electronsKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasSemiconductors2019 / p. 975−978 https://doi.org/10.1134/S1063782619070133

artikkel ajakirjas
22

artikkel ajakirjas

Modeling and simulations of 4H-SiC/6H-SiC/4H-SiC single quantum-Well light emitting diode using diffusion bonding techniqueRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasMicromachines2021 / art. 1499 https://doi.org/10.3390/mi12121499

artikkel ajakirjas
23

artikkel ajakirjas

Modelling of charge carrier non-isothermal transport in silicon and silicon carbideVelmre, Enn; Udal, AndresProceedings of the Estonian Academy of Sciences. Engineering2000 / 2, p. 144-154 : ill

artikkel ajakirjas
24

artikkel kogumikus

Nano- and Micro-Scale simulations of Ge/3C-SiC and Ge/4H-SiC NN-heterojunction diodesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 20192020 / p. 490-496 https://doi.org/10.4028/www.scientific.net/MSF.1004.490

artikkel kogumikus
25

artikkel kogumikus

Nano and micro-scale simulations of Si/4H-SiC and Si/3C-SiC NN-heterojunction diodesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon Carbide and Related Materials 2018 : 12thEuropean Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK2019 / p. 357–361 https://doi.org/10.4028/www.scientific.net/MSF.963.357

artikkel kogumikus

Kirjeid leitud 43, kuvan 1 - 25