prindi

A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiC

autor
Velmre, Enn
Udal, Andres
vastutusandmed
Enn Velmre, Andres Udal
allikas
Abstracts of International Conference on Silicon Carbide and Related Materials : ICSCRM'99 : October 10-15, 1999, Research Triangle Park, North-Carolina, USA
ilmumiskoht
[S.l.]
ilmumisaasta
1999
leheküljed
paper no 395, 2 p
keel
inglise
Velmre, E., Udal, A. A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiC // Abstracts of International Conference on Silicon Carbide and Related Materials : ICSCRM'99 : October 10-15, 1999, Research Triangle Park, North-Carolina, USA. [S.l.], 1999. paper no 395, 2 p.