Velmre, E., Udal, A. - TalTech teadusportaal

A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiC

autor

Velmre, Enn

Udal, Andres

vastutusandmed

Enn Velmre, Andres Udal

allikas

Abstracts of International Conference on Silicon Carbide and Related Materials : ICSCRM'99 : October 10-15, 1999, Research Triangle Park, North-Carolina, USA

ilmumiskoht

[S.l.]

ilmumisaasta

1999

leheküljed

paper no 395, 2 p

keel

inglise

Velmre, E., Udal, A. A theoretical study of electron drift mobility anisotropy in n-type 4H- and 6H-SiC // Abstracts of International Conference on Silicon Carbide and Related Materials : ICSCRM'99 : October 10-15, 1999, Research Triangle Park, North-Carolina, USA. [S.l.], 1999. paper no 395, 2 p.