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Change in the parameters of electron-irradiated 4H-SIC Schottky diodes as a function of the time during low-temperature isothermal annealingKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Toompuu, Jana; Sleptsuk, Natalja; Rang, ToomasSilicon Carbide and Related Materials 2018 : 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK2019 / p. 734-737 https://doi.org/10.4028/www.scientific.net/MSF.963.734 Conference proceeding at Scopus Article at Scopus

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Comparative results of low temperature annealing of lightly doped n-layers of silicon carbide irradiated by protons and electronsKozlovski, Vitali V.; Korolkov, Oleg; Lebedev, Alexander A.; Toompuu, Jana; Sleptsuk, NataljaSilicon Carbide and Related Materials 2019 : 18th International Conference on Silicon Carbide and Related Materials 2019 (ICSCRM 2019), Kyoto, Japan, September 29 - October 4, 20192020 / p. 231-236 https://doi.org/10.4028/www.scientific.net/MSF.1004.231 Conference Proceedings at Scopus Article at Scopus

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Dependence of the carrier removal rate in 4H-SIC PN structures on irradiation temperatureLebedev, Alexander A.; Davydovskaya, Klavdya S.; Kozlovski, Vitali V.; Korolkov, Oleg; Sleptsuk, Natalja; Toompuu, JanaSilicon Carbide and Related Materials 2018 : 12th European Conference on Silicon Carbide and Related Materials (ECSCRM 2018) : Selected, peer reviewed papers from the European Conference on Silicon Carbide and Related Materials (ECSCRM 2018), September 2-6, 2018,Birmingham, UK2019 / p. 730-733 https://doi.org/10.4028/www.scientific.net/MSF.963.730 Conference proceeding at Scopus Article at Scopus

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DLTS measurements on 4H-SiC JBS-diodes with boron implanted local p-n junctionsIvanov, Pavel; Korolkov, Oleg; Samsonova, Tatyana; Sleptšuk, Natalja; Potapov, Alexander; Toompuu, Jana; Rang, ToomasMaterials science forum2011 / p. 409-412 https://www.researchgate.net/publication/272046403_DLTS_measurements_on_4H-SiC_JBS-diodes_with_boron_implanted_local_p-n_junctions

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