Nanoscale and microscale simulations of N-N junction heterostructures of 3C-4H silicon carbide
author
statement of authorship
Haroon Rashid, Ants Koel, Toomas Rang, Reto Gähwiler, Martin Grosberg & Rauno Jõemaa
location of publication
Southampton
publisher
year of publication
pages
p. 235-248 : ill
conference name, date
8th International Conference on Computational Methods and Experiments in Materials Characterisation, 21-23 June, 2017
conference location
Tallinn, Estonia
ISSN
1746-4471
ISBN
978-1-78466-197-7
notes
Bibliogr.: 24 ref
Open Access
Open Access
scientific publication
teaduspublikatsioon
TTÜ department
language
inglise
subject term
keyword
transmission spectrum
projected device density of states (PDDOS)
Rashid, M.H., Koel, A., Rang, T., Gähwiler, R., Grosberg, M., Jõemaa, R. Nanoscale and microscale simulations of N-N junction heterostructures of 3C-4H silicon carbide // Materials and contact characterisation VIII. Southampton : WIT Press, 2017. p. 235-248 : ill. (WIT transactions on engineering sciences ; 116).