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1
journal article
Analysis of deep level centers in GaAs pin-diode structures
Korolkov, Oleg
;
Toompuu, Jana
;
Rang, Toomas
Elektronika ir elektrotechnika = Electronics and electrical engineering
2013
/
[4 p. ] : ill
journal article
2
book article
Characterization of deep level traps in semiconductor structures using numerical experiments
Koel, Ants
;
Rang, Toomas
;
Rang, Galina
Materials characterization VII
2015
/
p. 253-261 : ill
book article
3
book article
Characterization of the temperature dependent behavior of snappy phenomenon by the switching-off of GaAs power diode structures
Koel, Ants
;
Rang, Toomas
;
Rang, Galina
Heat transfer XIII : simulation and experiments in heat and mass transfer
2014
/
p. 439-449 : ill
book article
4
dissertation
Development and optimisation of modelling methods and algorithms for terahertz range radiation sources based on quantum well heterostructures = Kvantaukudega heterostruktuuridel põhinevate terahertskiirgurite modelleerimismeetodite ja -algoritmide arendus ja optimeerimine
Reeder, Reeno
2014
https://www.ester.ee/record=b3084247*est
dissertation
5
book article
GaAs based diffusion welded high voltage diode stacks [Electronic resource]
Toompuu, Jana
;
Korolkov, Oleg
;
Sleptšuk, Natalja
;
Voitovitš, Viktor
;
Rang, Toomas
IEEE International Conference on Semiconductor Electronics CD-ROM Proceedings
2010
/
[4] p
https://ieeexplore.ieee.org/document/5549505
book article
6
book article
Investigation of deep level centers in i- and n-layers of GaAs pin-diodes
Toompuu, Jana
;
Korolkov, Oleg
;
Sleptšuk, Natalja
;
Rang, Toomas
BEC 2014 : 2014 14th Biennial Baltic Electronics Conference : proceedings of the 14th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 6-8, 2014, Tallinn, Estonia
2014
/
p. 25-28 : ill
book article
7
book article
Method of samples preparation intended for research of deep centers in i-, n-, and p-layers of GaAs p
+
-pin-n
+
structures and result of analysis
Toompuu, Jana
;
Sleptšuk, Natalja
;
Korolkov, Oleg
;
Rang, Toomas
BEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia
2016
/
p. 35-38 : ill
http://www.ester.ee/record=b2150914*est
book article
8
journal article EST
/
journal article ENG
Spectral properties of incoherent terahertz torch based on parabolic Ga(As,Bi)/AlGaAs quantum wells
Karaliunas, Mindaugas
;
Pagalys, Justas
;
Jakštas, Vytautas
;
Norkus, Ričardas
;
Urbanowicz, Andrzej
;
Devenson, Jan
;
Devenson, Renata
;
Udal, Andres
;
Valušis, Gintaras
Terahertz Emitters, Receivers, and Applications X : SPIE Optical Engineering + Applacations, 11-15 August 2019, San Diego, California, United States : proceedings
SPIE digital library
2019
https://doi.org/10.1117/12.2528428
Conference proceeding at Scopus
Article at Scopus
Article at WOS
journal article EST
/
journal article ENG
9
book article
Влияние дефектов эпитаксиального слоя на напряжение пробоя высоковольтных арсенид-галлиевых структур
Aškinazi, G.
;
Zolotarevskaja, O.
;
Meiler, Boriss
Полупроводники и гетеропереходы : сборник статей
1978
/
с. 64-66 : илл
https://www.ester.ee/record=b1262177*est
book article
10
book article
Влияние распределения примеси на прямую ВАХ арсенидгаллиевых силовых диодных структур
Velmre, Enn
;
Freidin, Boris
Полупроводниковые приборы : сборник статей
1982
/
с. 32-37
https://www.ester.ee/record=b1356516*est
book article
11
journal article
Коэффициенное ударное ионизацеи носителей заряда в <100> арсениде галлия
Rang, Toomas
;
Puusepp, Märt
Электронная техника. Серия 2, Полупроводниковые приборы : научно-технический сборник
1987
/
с. 98-100
https://www.ester.ee/record=b2160501*est
journal article
12
book article
Межфазное взаимодействие и ориентационные соотношения в системе никкель - арсенид галлия
Meiler, Boriss
Электрофизические свойства полупроводниковых и диэлектрических материалов
1988
/
с. 3-12
book article
13
journal article
Межфазное взаимодействие на контакте Ni-Si и Ni-GaAs
Meiler, Boriss
Поверхность : физика, химия, механика
1985
/
с. 62-67 : илл
https://www.ester.ee/record=b2149829*est
journal article
14
journal article
Неизотермическая динамическая прямая ветвь вольт-амперной характеристики силовых арсенид-галлиевых диодов
Aškinazi, German
;
Velmre, Enn
;
Logussov, A.
;
Timofejev, V.
;
Freidin, Boris
;
Šumilin, V.
Eesti NSV Teaduste Akadeemia toimetised. Füüsika. Matemaatika = Известия Академии наук Эстонской ССР. Физика. Математика = Proceedings of Academy of Sciences of the Estonian SSR. Physics. Mathematics
1984
/
с. 48-56
https://www.ester.ee/record=b1264310*est
journal article
15
book article
Рост и морфология толстых слоев арсенида галлия, выращенных жидкофазной эпитаксией
Meiler, Boriss
;
Zolotarevski, L.
;
Paat, Aadu
;
Orenštein, I.
Полупроводники и гетеропереходы : сборник статей
1987
/
с. 24-26
https://www.ester.ee/record=b1262177*est
book article
16
book article
Сравнение статических параметров диодных структур из GaAs и InP
Velmre, Enn
;
Nurste, Ivar
;
Freidin, Boris
Тезисы докладов Республиканской научно-технической конференции "Современные методы и устройства радиоэлектронного оборудования", посвященной Дню радио. Секция: полупроводниковые приборы
1981
/
с. 30-31
https://www.ester.ee/record=b1310801*est
book article
17
book article
Формирование морфологии и структуры толстых автоэпитакисальных слоев арсенида галлия при росте из раствора-расплава
Zolotarevski, L.
;
Meiler, Boriss
;
Orenštein, I.
;
Paat, Aadu
Технология быстродействующих силовых полупроводниковых приборов : сборник статей
1989
/
с. 192-197 : илл
https://www.ester.ee/record=b1267766*est
book article
18
journal article
Численное моделирование неизотермических переходных процессов в арсенид-галлиевых диодных структурах
Velmre, Enn
;
Freidin, Boris
Известия высших учебных заведений : международный ежемесячный научно-технический журнал. Радиоэлектроника
1984
/
с. 86-88
https://www.ester.ee/record=b2768571*est
journal article
19
journal article
Численное моделирование переходных процессов в арсенид-галлиевых диодных структурах
Velmre, Enn
;
Freidin, Boris
Известия высших учебных заведений : международный ежемесячный научно-технический журнал. Радиоэлектроника
1983
/
с. 93-95
https://www.ester.ee/record=b2768571*est
journal article
20
book article
Численный анализ неизотермических переходных процессов в арсенидгаллиевых диодных структурах
Aškinazi, German
;
Velmre, Enn
;
Kivi, U.
;
Timofejev, V.
;
Freidin, Boris
;
Šumilin, V.
Полупроводниковые гетеропереходы : тезисы докладов II республиканской конференции, Эльва 24-26 ноября 1982 г.
1982
/
с. 15
https://www.ester.ee/record=b1304403*est
book article
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