Kropman, D., Mellikov, E., Kärner, T., Heinmaa, I., Laas, T., Londos, C.A., Misiuk, A.

full record print

Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties

author

Kropman, Daniel

Mellikov, Enn

Kärner, Tiit

Heinmaa, Ivo

Laas, Tõnu

Londos, Charalampos

Misiuk, Andrzej

statement of authorship

Daniel Kropman, Enn Mellikov, Tiit Kärner, Ivo Heinmaa, Tõnu Laas, Charalampos A. Londos, Andrzej Misiuk

source

Solid state phenomena

journal volume number month

Vol. 178/179

year of publication

2011

pages

p. 263-266

url

https://www.sciencedirect.com/science/article/pii/S0040609009014564

ISSN

1012-0394

language

inglise

Märksõnad ja võtmesõnad

subject term

elektroni paramagnetresonantsspektroskoopia

tuumamagnetresonants

punktdefektid

räni

ränidioksiid

keyword

EPR

NMR

point defect

Si-SiO2 interface

stress relaxation

Kropman, D., Mellikov, E., Kärner, T., Heinmaa, I., Laas, T., Londos, C.A., Misiuk, A. Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties // Solid state phenomena (2011) Vol. 178/179, p. 263-266. https://www.sciencedirect.com/science/article/pii/S0040609009014564