prindi

Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties

autor
Kropman, Daniel
Mellikov, Enn
Kärner, Tiit
Heinmaa, Ivo
Laas, Tõnu
Londos, Charalampos
Misiuk, Andrzej
vastutusandmed
Daniel Kropman, Enn Mellikov, Tiit Kärner, Ivo Heinmaa, Tõnu Laas, Charalampos A. Londos, Andrzej Misiuk
allikas
Solid state phenomena
ajakirja aastakäik number kuu
Vol. 178/179
ilmumisaasta
2011
leheküljed
p. 263-266
leitav
https://www.sciencedirect.com/science/article/pii/S0040609009014564
märksõna
elektroni paramagnetresonantsspektroskoopia
tuumamagnetresonants
punktdefektid
räni
ränidioksiid
võtmesõna
EPR
NMR
point defect
Si-SiO2 interface
stress relaxation
ISSN
1012-0394
keel
inglise
Kropman, D., Mellikov, E., Kärner, T., Heinmaa, I., Laas, T., Londos, C.A., Misiuk, A. Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface properties // Solid state phenomena (2011) Vol. 178/179, p. 263-266. https://www.sciencedirect.com/science/article/pii/S0040609009014564