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artikkel ajakirjas

Cross-check of the dating results obtained by ESR and IR-OSL methods : implication for the Pleistocene palaeoenvironmental reconstructionsMolodkov, AnatoliQuaternary geochronology2012 / p. 188-194 : ill https://www.sciencedirect.com/science/article/pii/S1871101412000301

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2

artikkel kogumikus

F-центр и центры неконтролируемых примессей в монокристаллах ZnSLott, KaljuПолупроводниковые материалы. 21972 / с. 3-10 : илл https://www.ester.ee/record=b1476073*est https://digikogu.taltech.ee/et/Item/75bd57ba-4543-4614-ab7c-3230cb13e005

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3

artikkel ajakirjas

Hydrogen interaction with point defects in the Si-SiO2 structures and its influence on the interface propertiesKropman, Daniel; Mellikov, Enn; Kärner, T.; Ugaste, Ülo; Laas, Tõnu; Heinmaa, I.; Abru, Uno; Medvid, A.Solid state phenomena2008 / p. 345-350 https://www.scientific.net/SSP.131-133.345

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4

artikkel ajakirjas

Interaction between point defects in the Si-Si=2 systemKropman, Daniel; Kärner, T.; Samoson, Ago; Heinmaa, I.; Mellikov, EnnNuclear instruments & methods in physics research. Section B2002 / p. 78-82 https://www.sciencedirect.com/science/article/pii/S0168583X0100862X

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5

artikkel kogumikus

Interaction between point defects in the Si-SiO2 system during the process of its formationKropman, Daniel; Kärner, T.; Samoson, Ago; Heidmaa, I.; Ugaste, Ülo; Mellikov, EnnDefect and Diffusion Forum2001 / p. 1737-1744 https://www.sciencedirect.com/science/article/abs/pii/S0168583X0100862X

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6

artikkel ajakirjas

Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface propertiesKropman, Daniel; Mellikov, Enn; Kärner, Tiit; Heinmaa, Ivo; Laas, Tõnu; Londos, Charalampos; Misiuk, AndrzejSolid state phenomena2011 / p. 263-266 https://www.sciencedirect.com/science/article/pii/S0040609009014564

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7

artikkel ajakirjas

Interaction of point defects with impurities in the Si-SiO2 system and its influence on the interface propertiesKropman, Daniel; Kärner, Tiit; Dolgov, Sergei; Heinmaa, Ivo; Laas, Tõnu; Londos, CharalamposPhysica status solidi (c)2011 / p. 694-696 : ill https://www.sciencedirect.com/science/article/pii/S0040609009014564

artikkel ajakirjas

8

artikkel kogumikus

Point defects interaction with extended defects and impurities and its influence on the Si-SiO2 system propertiesKropman, Daniel; Arbu, Uno; Kärner, T.; Ugaste, Ülo; Mellikov, Enn; Kauk, Marit; Heinmaa, I.; Samoson, Ago; Medvid, A.Gettering and defect engineering in semiconductor technology. XI2005 / p. 333-338 : ill https://www.researchgate.net/publication/243760197_Point_Defects_Interaction_with_Extended_Defects_and_Impurities_and_Its_Influence_on_the_Si-SiO_2_System_Properties

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9

artikkel kogumikus

Point defects interaction with extended defects in the Si-SiO2 system [Electronic resource]Kropman, Daniel; Kärner, T.; Abru, Uno; Ugaste, Ülo; Mellikov, EnnProceedings IVC-16 : Venice, 20042004 / p. SS1-TuP394 [CD-ROM] https://www.researchgate.net/publication/243760197_Point_Defects_Interaction_with_Extended_Defects_and_Impurities_and_Its_Influence_on_the_Si-SiO_2_System_Properties

artikkel kogumikus

10

artikkel ajakirjas

Strain relaxation mechanism in the Si-SiO2 system and its influence on the interface propertiesKropman, Daniel; Mellikov, Enn; Öpik, Andres; Lott, Kalju; Volobujeva, Olga; Kärner, T.; Heinmaa, I.; Laas, Tõnu; Medvid, A.Physica B : condensed matter2009 / 23/24, p. 5153-5155 : ill

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11

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Synthesis, EPR and DFT calculations of rare Ag(II)porphyrins and the crystal structure of [Zn(II)tetrakis(4-bromo-2-thiophene)porphyrin]Ghazzali, Mohamed; Abu-Youssef, Morsy; Larsson, Krister; Hansson, Örjan; Amer, Adel; Tamm, Toomas; Öhström, LarsInorganic chemistry communications2008 / 9, p. 1019-1022 : ill https://www.sciencedirect.com/science/article/pii/S1387700308002281

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12

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The complementary use of UV, EPR and SEC to study the structural changes of humic substances during wood waste compostingBikovens, O.; Lepane, Viia; Makarõtševa, Natalja; Dizhbite, T.; Telysheva, G.Functions of natural organic matter in changing environment2013 / p. 113-117

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