Interaction between point defects in the Si-SiO2 system during the process of its formation
autor
vastutusandmed
D.Kropman, T.Kärner, A.Samosson, I.Heidmaa, Ü.Ugaste, E.Mellikov
allikas
ilmumiskoht
[S. l.]
kirjastus/väljaandja
ilmumisaasta
leheküljed
p. 1737-1744
märksõna
tuumamagnetresonantsspektroskoopia|
keel
inglise
Kropman, D., Kärner, T., Samoson, A., Heidmaa, I., Ugaste, Ü., Mellikov, E. Interaction between point defects in the Si-SiO2 system during the process of its formation // Defect and Diffusion Forum. [S. l.] : Elsevier, 2001. p. 1737-1744.