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Rang, Toomas (TTÜ autor)

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Kirjeid leitud 327
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ekspordi kõik päringu tulemused (327)
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artikkel kogumikus

Self-heating phenomenon and current suppressing effect at the SiC Schottky interfacesRang, Toomas; Kurel, RaidoSoftware for electrical engineering analysis and design. IV1999 / p. 153-162: ill

artikkel kogumikus
227

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Semiconductor based alcohol sensing elementRang, Toomas; Kasemaa, ArgoProceedings of the 6th Nexuspan Workshop Microsystems Technology Activities in Baltic Region : 23-24 April, 1999, Vilnius, Lithuania1999 / p. 82-84

artikkel kogumikus
228

artikkel kogumikus EST / artikkel kogumikus ENG

SiC JBS diode symmetrical voltage doubler represented as the diffusion-welded stackKorolkov, Oleg; Land, Raul; Toompuu, Jana; Sleptšuk, Natalja; Rang, ToomasSilicon carbide and related materials 2017 : ICSCRM 2017 : selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and related materials, September 17-22, 2017, Washington, DC, USA2018 / p. 862–865 : ill https://doi.org/10.4028/www.scientific.net/MSF.924.862 Conference Proceedings at Scopus Article at Scopus

artikkel kogumikus EST / artikkel kogumikus ENG
229

artikkel kogumikus

SiC Schottky diode for power convertersPikkov, Mihhail; Rang, ToomasPEDC 2001 : Power Electronics Devices Compatibility : 2nd conference : 3-5 September 2001, Zielona Gora, Poland2001 / p. 156-161 : ill

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230

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SiC Schottky diode for use in power convertorsPikkov, Mihhail; Rang, Toomas; Pokatilov, AndreiBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 245-246 : ill

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231

artikkel kogumikus

SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, Toomas11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]2016 / p. 42

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232

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SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasSilicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece2017 / p. 697-700 : ill https://doi.org/10.4028/www.scientific.net/MSF.897.697

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233

artikkel ajakirjas

SiC и GaAs диоды в устройствах силовой электроникиBlinov, Andrei; Vinnikov, Dmitri; Rang, ToomasТехнiчна електродинамiка : тематичний випуск : силова електрониiка та енергоефективнiсть2012 / с. 42-46 : ил

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234

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Silicon carbide - new challenge for power semiconductor devicesRang, Toomas; Rang, Galina2nd International Symposium "Topical Problems of Education in the Field of Electrical and Power Engineering" : Kuressaare, Estonia, January 17-22, 20052005 / p. 36-42 : ill

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235

artikkel ajakirjas

Silicon integrated circuit fabrication process modeling and simulationRang, Toomas; Tarnay, K.; Mizsei, JanosPeriodica polytechnica. Electrical engineering = Электротехника1980 / p. 109-113 https://www.ester.ee/record=b1198855*est

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236

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Silicon planar technology process modelingRang, Toomas; Tarnay, K.; Masszi, F.Test methods in electronics technology : third International Spring Seminar on Electronics Technology, May 15-18, 1979, Balatonfüred, Hungary1979 / p. 110-120

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237

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Simple relationship between the breakdown voltage, concentration and junction depth pn diffused junctionsRang, ToomasPhysica status solidi. A, Applied research1982 / p. K117-K119 : tab., joon https://www.ester.ee/record=b1562026*est

artikkel ajakirjas
238

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Simulation of deep energy traps to explain the VAC temperature dependence anomaly of diffusion welded Schottky contactsKoel, Ants; Rang, Toomas; Rang, GalinaICSCRM2011 : Cleveland Ohio, USA, September 11-16, 2011 : abstracts2011 / p. 340 : ill

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239

artikkel ajakirjas EST / artikkel ajakirjas ENG

Simulations of benzene and hydrogen-sulfide gas detector based on single-walled carbon nanotube over intrinsic 4H-SiC substrateRashid, Muhammad Haroon; Koel, Ants; Rang, Toomas; Ziko, Mehadi HasanMicromachines2020 / art. 453, 13 p. : ill https://doi.org/10.3390/mi11050453 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

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240

artikkel ajakirjas EST / artikkel ajakirjas ENG

Simulations of graphene nanoribbon field effect transistor for the detection of propane and butane gases : a first principles studyRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasNanomaterials2020 / art. 98 https://doi.org/10.3390/nano10010098 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

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241

artikkel kogumikus EST / artikkel kogumikus ENG

Simulations of heterostructures based on 3C-4H and 6H-4H silicon carbide polytypesRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasSilicon carbide and related materials 2017 : ICSCRM 2017 : selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and related materials, September 17-22, 2017, Washington, DC, USA2018 / p. 302-305 : ill https://doi.org/10.4028/www.scientific.net/MSF.924.302 Conference Proceedings at Scopus Article at Scopus

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242

artikkel ajakirjas EST / artikkel ajakirjas ENG

Simulations of propane and butane gas sensor based on pristine armchair graphene nanoribbonRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasIOP conference series : materials science and engineering2018 / art. 012001, 8 p https://doi.org/10.1088/1757-899X/362/1/012001 Conference proceedings at Scopus Article at Scopus Article at WOS

artikkel ajakirjas EST / artikkel ajakirjas ENG
243

artikkel kogumikus

A smart capless voltage regulator for very high bandwidth A/D and D/A converters in a standard 28nm CMOS processKampus, Vahur; Rang, ToomasBEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia2016 / p. 43-46 : ill http://www.ester.ee/record=b2150914*est

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244

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Some comparative properties of diffusion-welded contacts to 6H and 4H silicon carbideKorolkov, Oleg; Rang, ToomasSilicon Carbide and Related Materials 2001 : ICSCRM2001 : proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28 - November 2, 2001. Part 22002 / p. 941-944 : ill

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245

artikkel kogumikus

Some of comparative properties of diffusion welded contacts to 6H- and 4H-silicon carbideKorolkov, Oleg; Rang, ToomasInternational Conference on Silicon Carbide and Related Materials 2001 - ICSCRM2001 - October 28-November 2, 2001 (Epochal Tsukuba, Ibaraki, Japan) : technical digest2001 / p. 625-626 : ill https://www.researchgate.net/publication/250340293_Some_Comparative_Properties_of_Diffusion-Welded_Contacts_to_6H_and_4H_Silicon_Carbide

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246

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Szilicium planar technologiai eljaras szamitögepes stimulaciojaRang, Toomas; Tarnay, K.; Masszi, F.Finommechanika, mikrotechnika: az Optikai, Akusztikai és Filmtechnikai Egyesület, a Híradástechnikai Tudományos Egyesület és a Méréstechnikai és Automatizálási Tudományos Egyesület lapja1979 / p. 257-260

artikkel ajakirjas
247

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Static and dynamic behavior of the SiC complementary JBS structuresKurel, Raido; Rang, ToomasBEC 2006 : 2006 International Baltic Electronics Conference : Tallinn University of Technology, October 2-4, 2006, Tallinn, Estonia : proceedings of the 10th Biennial Baltic Electronics Conference2006 / p. 59-62 : ill

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248

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Status quo in Estonian electronics industry?Rang, Toomas; Tamm, UljasBEC : Baltic Electronics Conference : proceedings of the 4th Biennial Conference, October 9-14, 1994, Tallinn (Estonia). 21994 / p. 585-591: ill https://www.ester.ee/record=b2150914*est

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249

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Steady state analysis of the commutating LC filter based dual active bridge for the isolation stage of power electronic transformer [Electronic resource]Beldjajev, Viktor; Rang, Toomas; Zakis, JanisCPE 2013 : 2013 International Conference on Compatibility and Power Electronics (CPE) : June 5-7, 2013, Ljubljana, Slovenia : conference proceedings2013 / p. 138-143 : ill [CD-ROM]

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250

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Study of surface defects in 4H-SiC Schottky diodes using a scanning Kelvin probeMizsei, Janos; Korolkov, Oleg; Toompuu, Jana; Rang, ToomasThe 9th European Conference on Silicon Carbide and Related Materials : abstract book : St. Petersburg Russia, 2-6 September, 20122012 / 2 p. : ill

artikkel kogumikus

Kirjeid leitud 327, kuvan 226 - 250

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