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1

artikkel kogumikus

Accurate NBTI-induced gate delay modeling based on intensive SPICE simulationsKostin, Sergei; Raik, Jaan; Ubar, Raimund-Johannes; Jenihhin, MaksimMEDIAN Finale : Workshop on Manufacturable and Dependable Multicore Architectures at Nanoscale : November 10-11, 2015, Tallinn, Estonia2015 / p. 21-26 : ill

artikkel kogumikus

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artikkel kogumikus

Analysis and evaluation of PWM and PSM shoot-through control methods for voltage-fed qZSI based DC/DC convertersRoasto, Indrek; Vinnikov, DmitriEPE-PEMC 2010 : 14th International Power Electronics and Motion Control Conference : 6-8 September 2010, Ohrid, Republic of Macedonia2010 / p. T3-100 - T3-105

artikkel kogumikus

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artikkel kogumikus

Analysis of switching properties of different high voltage IGBTs operating under hard-switching conditionsBlinov, Andrei; Jalakas, Tanel; Vinnikov, Dmitri; Laugis, JuhanBEC 2010 : 2010 12th Biennial Baltic Electronics Conference : proceedings of the 12th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 4-6, 2010, Tallinn, Estonia2010 / p. 323-326 : ill

artikkel kogumikus

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artikkel kogumikus

Classical electrodynamics, charge distributions of currents and the metal transistorTaniloo, RainerBEC 2002 : proceedings of the 8th Biennial Baltic Electronics Conference : October 6-9, 2002, Tallinn, Estonia2002 / p. 61-64 : ill

artikkel kogumikus

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artikkel kogumikus

Compact avalanche transistor model for circuit simulation of Bi and BiCMOS cellsBubennikov, Alexander N.; Kobosev, Gennady; Kozhuhov, D.; Uchenov, A.BEC : Baltic Electronics Conference : proceedings of the 4th Biennial Conference, October 9-14, 1994, Tallinn (Estonia). 21994 / p. 523-527: ill https://www.ester.ee/record=b2150914*est

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artikkel kogumikus

Complementary Darlington circuitMännama, VelloBEC : Baltic Electronics Conference : proceedings of the 4th Biennial Conference, October 9-14, 1994, Tallinn (Estonia). 11994 / p. 223-228: ill

artikkel kogumikus

7

artikkel kogumikus

Complex simulation of punchthrough, tunneling and high-speed characteristics of scaled bipolar devices and circuitsBubennikov, Alexander N.; Ishevsky, D.V.Automation, simulation & measurement : ASM'91 : 3rd biennal conference, Tallinn, October 7-11, 1991. Section S / Tallinn Technical University1992 / p. 26-31: ill

artikkel kogumikus

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artikkel kogumikus

Computation of MOS transistor channel currents using Gear methods in SPICECremascoli, Paolo; Gubian, Paolo; Zanella, MarinaAutomation, simulation & measurement : ASM'91 : 3rd biennal conference, Tallinn, October 7-11, 1991. Section S / Tallinn Technical University1992 / p. 59-68: ill

artikkel kogumikus

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artikkel kogumikus

Determination of transistor low freqency noise parameters for SPICE programmeZeltinš, M.; Slaidinš, I.Automation, simulation & measurement : ASM'91 : 3rd biennal conference, Tallinn, October 7-11, 1991. Section S / Tallinn Technical University1992 / p. 127-131: ill

artikkel kogumikus

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artikkel ajakirjas

Energeetika : pooljuhid - otsapidi uueneva energiatehnika küljesLehtla, TõnuHorisont2012 / lk. 34-39 : ill https://artiklid.elnet.ee/record=b2467567*est

artikkel ajakirjas

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artikkel kogumikus

Feasibility study of 200 kW half-bridge and full-bridge DC/DC converters with 6.5 kV IGBTsVinnikov, Dmitri; Lehtla, Madis19th International Symposium on Power Electronics, Electrical Drives, Automation and Motion : Speedam 2008 : Ischia (Italy), June 11th-13th, 2008 : conference proceedings2008 / p. 1537-1541 : ill. [CD-ROM] https://ieeexplore.ieee.org/document/4581238

artikkel kogumikus

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artikkel kogumikus

A high-frequency small-geometry MOSFET modelKanunnikov, A.I.; Shilin, V.A.Automation, simulation & measurement : ASM'91 : 3rd biennal conference, Tallinn, October 7-11, 1991. Section A. Section M / Tallinn Technical University1992 / p. 29-33: ill

artikkel kogumikus

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dissertatsioon

High-κ metal oxide thin film by chemical spray pyrolysis : from optimization of material properties to application in thin film transistor = Metallioksiidi õhukesed kiled keemilise pihustuspürolüüsi meetodil : materjali omaduste optimeerimine ja rakendamine õhukesekilelistes transistoridesOluwabi, Abayomi Titilope2020 https://digikogu.taltech.ee/et/Item/4b6d9afd-74d2-40ac-9c12-335d2f608474 https://www.ester.ee/record=b5362429*est

dissertatsioon

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artikkel ajakirjas

Impact of orientation on the bias of SRAM-based PUFsAbideen, Zain Ul; Wang, Rui; Perez, Tiago Diadami; Schrijen, Geert-Jan; Pagliarini, Samuel NascimentoIEEE design & test2024 / p. 14-20 https://doi.org/10.1109/MDAT.2023.3322621

artikkel ajakirjas

Seotud publikatsioonid 1

Leveraging FPGA Reconfigurability as an Obfuscation Asset = FPGA ümberkonfigureeritavuse rakendamine hägustamise vahendina

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artikkel kogumikus

Inseneri ja tehnoloogia võidujooksust nanomeeterdistantsil, ehk, Tehnoloogia valitsemisest ja usaldamisest : akadeemiline ettekanne 10. novembril 2010 Eesti Teaduste AkadeemiasUbar, Raimund-JohannesTallinna Tehnikaülikooli aastaraamat 20102011 / lk. 249-260

artikkel kogumikus

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artikkel ajalehes

Jaan Raik: kiibidisain aitaks saada Eestil jõukaks tehnoloogiamaaksMaidla, Margusnovaator.err.ee2023

artikkel ajalehes

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artikkel ajakirjas

Lihtne toiteallikasGerasimtšuk, ValeriSide. Raadio. Televisioon : infoseeria 101980 / lk. 14-16 https://www.ester.ee/record=b1232303*est

artikkel ajakirjas

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artikkel kogumikus

Low power SC structures with low threshold MOS switchesMännama, Vello; Sabolotny, ReinThe 7th Biennial Conference on Electronics and Microsystem Technology "Baltic Electronics Conference" : BEC 2000 : October 8 - 11, 2000, Tallinn, Estonia : conference proceedings2000 / p. 75-78 : ill

artikkel kogumikus

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artikkel ajakirjas

Mikroprotsessor Tehnikaülikoolist transistori 50. sünnipäevaksUbar, Raimund-JohannesHorisont1997 / 8, lk. 10-11: ill https://artiklid.elnet.ee/record=b2325971*est

artikkel ajakirjas

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artikkel kogumikus

New high-gain step-up DC/DC converter with high-frequency isolationVinnikov, Dmitri; Zakis, Janis; Husev, Oleksandr; Strzelecki, Ryszard2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC), Orlando (FL), USA, 5-9 Feb. 20122012 / p. 1204-1209 : ill https://ieeexplore.ieee.org/document/6165972

artikkel kogumikus

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artikkel kogumikus

Numerical calculations of transient characteristics of a vertical field effect phototransistor taking into account resistance on the gateAbashkina, S.; Rimshans, J.; Korolkov, V.I.; Tabarov, T.Automation, simulation & measurement : ASM'91 : 3rd biennal conference, Tallinn, October 7-11, 1991. Section S / Tallinn Technical University1992 / p. 83-88: ill

artikkel kogumikus

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artikkel kogumikus

Numerical scaling and speed-pover-optimization of polysilicon transistors & circuitsBubennikov, AlexanderAutomation, simulation & measurement : ASM'91 : 3rd biennal conference, Tallinn, October 7-11, 1991. Section S / Tallinn Technical University1992 / p. 41-46: ill

artikkel kogumikus

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artikkel kogumikus

A simulation framework for 3-dimension networks-on-chip with different vertical channel density configurationsYing, Haoyuan; Jaiswal, Ashok; Abd El Ghany, Mohamed A; Hollstein, Thomas; Hofmann, KlausProceedings of the 2012 IEEE 15th International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS) : April 18-20, 2012 Tallinn, Estonia2012 / p. 83-88 : ill

artikkel kogumikus

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artikkel ajakirjas EST / artikkel ajakirjas ENG

Simulations of graphene nanoribbon field effect transistor for the detection of propane and butane gases : a first principles studyRashid, Muhammad Haroon; Koel, Ants; Rang, ToomasNanomaterials2020 / art. 98 https://doi.org/10.3390/nano10010098 Journal metrics at Scopus Article at Scopus Journal metrics at WOS Article at WOS

artikkel ajakirjas EST / artikkel ajakirjas ENG

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artikkel kogumikus

Study of MOSFET post-fault operation in fault-tolerant DC-DC convertersBakeer, Abualkasim Ahmed Ali; Chub, Andrii; Vinnikov, Dmitri2022 IEEE 7th International Energy Conference (ENERGYCON)2022 / Code 181231, 5 p https://doi.org/10.1109/ENERGYCON53164.2022.9830216

artikkel kogumikus

Seotud publikatsioonid 1

Fault-tolerant galvanically isolated DC‑DC converters with zero redundancy = Null-liiasusega veatolerantsed galvaanilise isolatsiooniga alalispingemuundurid

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