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1

artikkel ajakirjas

Analysis of deep level centers in GaAs pin-diode structuresKorolkov, Oleg; Toompuu, Jana; Rang, ToomasElektronika ir elektrotechnika = Electronics and electrical engineering2013 / [4 p. ] : ill

artikkel ajakirjas

2

artikkel kogumikus

Analysis of deep level spectrum in GaAs p+-p-i-n-n+ structuresToompuu, Jana; Sleptšuk, Natalja; Korolkov, Oleg; Rang, ToomasMaterials characterization VII2015 / p. 283-294 : ill

artikkel kogumikus

3

artikkel kogumikus

Characterization of deep level traps in semiconductor structures using numerical experimentsKoel, Ants; Rang, Toomas; Rang, GalinaMaterials characterization VII2015 / p. 253-261 : ill

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4

dissertatsioon

Characterization of Interfaces Between the Metal Film and Silicon Carbide Semiconductor = Metallkontakti ja ränikarbiidi vahelise liidespinna karakteriseerimineZiko, Mehadi Hasan2021 https://digikogu.taltech.ee/et/Item/34be534c-63e8-4013-b271-eaf1a7cb22e7 https://www.ester.ee/record=b5471196*est

dissertatsioon

5

artikkel kogumikus

Comparative characteristics of diffusion-welded high-voltage stacks and connected in series Schottky diodesSleptšuk, Natalja; Korolkov, Oleg; Land, Raul; Toompuu, Jana; Annus, Paul; Rang, ToomasBEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia2016 / p. 39-42 : ill http://www.ester.ee/record=b2150914*est

artikkel kogumikus

6

artikkel kogumikus

Degradation of 600-V 4H-SiC Schottky diodes under irradiation with 0.9 MeV electronsLebedev, Alexander A.; Davidovskaja, Klavdia; Kozlovski, Vitali V.; Korolkov, Oleg; Sleptšuk, Natalja; Toompuu, JanaSilicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece2017 / p. 447-450 : ill https://doi.org/10.4028/www.scientific.net/MSF.897.447

artikkel kogumikus

7

dissertatsioon

Formation of Diffusion welded Al contacts to semiconductor silicon carbideKorolkov, Oleg2004

dissertatsioon

8

artikkel kogumikus

High voltage diffusion‐welded stacks on the basis of SiC Schottky diodesKorolkov, Oleg; Sleptšuk, Natalja; Annus, Paul; Land, Raul; Rang, ToomasICSRM 2015 : program guide2015 / p. 73

artikkel kogumikus

9

artikkel kogumikus

High-voltage diffusion‐welded stacks on the basis of SiC Schottky diodesKorolkov, Oleg; Sleptšuk, Natalja; Annus, Paul; Land, Raul; Rang, ToomasSilicon carbide and related materials 2015 (ICSRM 2015) : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy2016 / p. 790-794 : ill http://dx.doi.org/10.4028/www.scientific.net/MSF.858.790

artikkel kogumikus

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artikkel kogumikus

Investigation of deep level centers in i- and n-layers of GaAs pin-diodesToompuu, Jana; Korolkov, Oleg; Sleptšuk, Natalja; Rang, ToomasBEC 2014 : 2014 14th Biennial Baltic Electronics Conference : proceedings of the 14th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 6-8, 2014, Tallinn, Estonia2014 / p. 25-28 : ill

artikkel kogumikus

11

dissertatsioon

Investigation of electrical characteristics of SiC based complementary JBS structuresKurel, Raido2005 https://www.ester.ee/record=b2053292*est

dissertatsioon

12

dissertatsioon

Investigation of the intermediate layer in the metal-silicon carbide contact obtained by diffusion welding = Difusioonkeevitusega valmistatud metalli ja ränikarbiidi vahelise üleminekuala vahekihi uurimineSleptšuk, Natalja2011 https://www.ester.ee/record=b2692547*est

dissertatsioon

13

artikkel kogumikus

Method of samples preparation intended for research of deep centers in i-, n-, and p-layers of GaAs p⁺-pin-n⁺ structures and result of analysisToompuu, Jana; Sleptšuk, Natalja; Korolkov, Oleg; Rang, ToomasBEC 2016 : 2016 15th Biennial Baltic Electronics Conference : proceedings of the 15th Biennial Baltic Electronics Conference : Tallinn University of Technology, October 3-5, 2016, Tallinn, Estonia2016 / p. 35-38 : ill http://www.ester.ee/record=b2150914*est

artikkel kogumikus

14

artikkel ajakirjas

Numerical analysis of forward-biased diode structures based on direct-gap semiconductorsVelmre, Enn; Freidin, BorisElectronics letters : an international publication1979 / p. 383-385 https://www.ester.ee/record=b2180432*est

artikkel ajakirjas

15

artikkel ajakirjas

Numerical analysis of the on state of diode structures based on direct-gap semiconductorsVelmre, Enn; Freidin, Boris; Udal, AndresPhysica scripta : an international journal for experimental and theoretical physics1981 / p. 468-471 https://www.ester.ee/record=b2244094*est

artikkel ajakirjas

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artikkel ajakirjas

Numerical modeling of the electrothermal transient process in diode structures based on direct-cap-semiconductorsVelmre, Enn; Freidin, BorisPhysica status solidi. A, Applied research1983 / p. K131-K134 https://www.ester.ee/record=b1562026*est

artikkel ajakirjas

17

artikkel ajakirjas

Power diode transicent characteristics modeling in inductive load circuitsFreidin, Boris; Velmre, Enn; Udal, AndresThe Bug Exterminator (USA)1991 / 3, p. 1-5: fig

artikkel ajakirjas

18

artikkel kogumikus

SiC JBS diode symmetrical voltage doubler represented as the diffusion-welded stackKorolkov, Oleg; Land, Raul; Toompuu, Jana; Sleptšuk, Natalja; Rang, ToomasSilicon carbide and related materials 2017 : ICSCRM 2017 : selected, peer reviewed papers from the 2017 International Conference on Silicon Carbide and related materials, September 17-22, 2017, Washington, DC, USA2018 / p. 862–865 : ill https://doi.org/10.4028/www.scientific.net/MSF.924.862

artikkel kogumikus

19

artikkel kogumikus

SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Kozlovski, Vitali V.; Lebedev, Alexander A.; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, ToomasSilicon Carbide and Related Materials 2016 : selected, peer reviewed papers from the 11th European Conference on Silicon Carbide and Related Materials 2016 (ECSCRM 2016), September 25-29, 2016, Halkidiki, Greece2017 / p. 697-700 : ill https://doi.org/10.4028/www.scientific.net/MSF.897.697

artikkel kogumikus

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artikkel kogumikus

SIC schottky diode rectifier bridge represented as the diffusion-welded stackKorolkov, Oleg; Land, Raul; Sleptšuk, Natalja; Toompuu, Jana; Rang, Toomas11th European Conference on Silicon Carbide and Related Materials : September 25-29, 2016, Porto Carras Grand Resort, Halkidiki, Greece : [poster session]2016 / p. 42

artikkel kogumikus

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artikkel kogumikus

Влияние распределения примеси на прямую ВАХ арсенидгаллиевых силовых диодных структурVelmre, Enn; Freidin, BorisПолупроводниковые приборы : сборник статей1982 / с. 32-37 https://www.ester.ee/record=b1356516*est

artikkel kogumikus

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artikkel kogumikus

Высоковольтный диод серии В9Vaher, G.; Vergi, U.; Karuks, O.; Kuusik, E.; Krunks, O.; Tarma, M.; Tarma, MatiПрименение эпитаксиальной технологии в производстве силовых полупроводниковых приборов : сборник материалов Всесоюзного научно-технического семинара. Часть 11978 / с. 5-12 https://www.ester.ee/record=b1273235*est

artikkel kogumikus

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artikkel kogumikus

Интегральное использование силового запираемого тиристора со встречно-параллельно включенным диодомPikkov, Mihhail; Saks, P.; Seleninov, KazimirТезисы докладов Республиканской научно-технической конференции "Современные методы и устройства радиоэлектронного оборудования", посвященной Дню радио. Секция: полупроводниковые приборы1981 / с. 45 https://www.ester.ee/record=b1310801*est

artikkel kogumikus

24

artikkel kogumikus

Исследование и разработка приборов интегрального исполнения системы тиристор-диодKrunks, O.; Seleninov, K.; Tarma, MatiСиловые полупроводниковые приборы : сборник статей1981 / с. 30-34 https://www.ester.ee/record=b1264428*est

artikkel kogumikus

25

artikkel kogumikus

Исследование прямой ВАХ мощных диодов с узкой базовой областьюVaher, G.; Velmre, Enn; Tarma, MatiПолупроводниковые приборы : сборник статей1982 / с. 9-12 https://www.ester.ee/record=b1356516*est

artikkel kogumikus

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